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2N3055 +BOM

60V 115W 5@10A,4V 15A NPN TO-3 Bipolar Transistors - BJT ROHS

Hersteller:

Onsemi
Herstellerteil #:

2N3055
Datenblatt:

2N3055 Datenblatt (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

70 V
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2N3055 Information

Description

The 2N3055 is a popular NPN power transistor, widely used in various applications due to its excellent safe operating area (SOA) and high current gain. It's designed for general-purpose amplification and switching circuits, making it suitable for audio, industrial control, and automotive systems. This transistor features a high DC current gain of 20-70, allowing it to handle high currents while maintaining a relatively low saturation voltage of 1.1V. Its SOA ensures reliable operation even under heavy load conditions. The 2N3055 is available in a TO-3 package and has Pb-free options for environmentally friendly applications. Its versatility, reliability, and ease of use make it a popular choice among engineers and hobbyists alike.

Features

The 2N3055 features include:

DC Current Gain - hFE = 20-70 @ IC = 4 Adc
Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
Pb-Free Packages are Available

These features make the 2N3055 a suitable component for various applications, including power amplifiers, motor control, and switching circuits.

Package

According to the product information, the package type for the 2N3055 is TO-3.

Pinout

The 2N3055 is a NPN power transistor with a TO-3 package, having three pins:

Base (B): Input pin for controlling the transistor's operation
Collector (C): Output pin that connects to the load or circuit being controlled
Emitter (E): Output pin that provides a reference point for the transistor's operation

This transistor is commonly used in power amplifiers, motor control circuits, and other applications where high current and voltage are required.

Manufacturer

The manufacturer of the 2N3055 is Microchip Technology.

Spezifikationen

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	70 V	Collector- Base Voltage VCBO	100 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	1.1 V
Pd - Power Dissipation	117 W	Gain Bandwidth Product fT	4 MHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Continuous Collector Current	15 A	DC Collector/Base Gain hfe Min	20 at 4 A, 4 V
DC Current Gain hFE Max	70 at 4 A, 4 V	Height	11.43 mm
Length	39.94 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	10	Subcategory	Transistors
Technology	Si	Width	26.67 mm
Package/Case	TO-3 -2

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