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HMC8205BF10 +BOM

0.3 or 0.4 GHz to 6 GHz, 35 W, GaN Power Amplifier

Hersteller:

Analog Devices, Inc
Herstellerteil #:

HMC8205BF10
Datenblatt:

HMC8205BF10 Datenblatt (PDF)
Serie: HMC8205BF
Feature-number-of-channels-per-chip:

1
Feature-maximum-operating-frequency-mhz:

6000
Feature-typical-power-gain-db:

28@6000MHz

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HMC8205BF10 Information

Description

The HMC8205BF10 is a high-power, single-ended RF amplifier from Analog Devices, designed for applications up to 6 GHz. It features a high power saturation point (P_SAT) of 46 dBm, high power gain of 20 dB, and high power added efficiency (PAE) of 38%. The amplifier operates with a supply voltage of V_DD = 50 V at 1300 mA and is packaged in a 10-lead LDCC package. It is suitable for various applications such as high-frequency amplification, signal analysis instruments, EMC testing solutions, wireless signal transmission, and more.

Features

According to the product information, the features of HMC8205BF10 are: • High P_SAT: 46 dBm • High power gain: 20 dB • High PAE: 38% • Instantaneous bandwidth: 0.3 GHz to 6 GHz • Supply voltage: V_DD = 50 V at 1300 mA These features make it suitable for high-frequency applications such as signal analysis instruments, EMC testing solutions, wireless signal transmission, and more.

Package

The package type of HMC8205BF10 is a 10-lead Lead Frame Chip Carrier (LFCSP) or also referred to as a 10-CLCC package.

Manufacturer

The manufacturer of the HMC8205BF10 is Analog Devices, a fabless semiconductor company that designs and manufactures analog, mixed-signal, and digital integrated circuits (ICs).

Applications

The HMC8205BF10 is suitable for high-frequency applications, including wireless signal transmission, spectrum monitoring equipment, signal generator design, microwave communication, antenna testing systems, satellite communication technology, radio frequency testing, mobile network testing, electronic countermeasures, electronic warfare systems, and radar signal processing.

Equivalent

According to Analog Devices' product specifications, the closest equivalent products to HMC8205BF10 are:

HMC8283SMT-TR
ADM8021RF
ADRF9914

These products share similar characteristics such as high power gain, high power saturation, and wide instantaneous bandwidth. They are also suitable for various application including microwave communication, signal analysis instruments, and wireless transmission systems.

Spezifikationen

feature-number-of-channels-per-chip	1	feature-maximum-operating-frequency-mhz	6000
feature-typical-3db-bandwidth-mhz		feature-typical-power-gain-db	28@6000MHz
feature-typical-noise-figure-db		feature-typical-output-power-range-dbm	30 to 60
feature-maximum-input-vswr		feature-maximum-output-vswr
feature-maximum-operating-supply-voltage-v	55	feature-maximum-supply-current-ma	1300(Typ)@50V
feature-packaging	Tray	feature-rad-hard
feature-pin-count	10	feature-cecc-qualified
feature-esd-protection		feature-escc-qualified
feature-military	No	feature-aec-qualified	No
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	3A001.b.2.a.4	feature-svhc
feature-svhc-exceeds-threshold	No	Package/Case	LDCC-10

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