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JANTX2N2222A +BOM

Small signal bipolar transistor with 0.8A collector current and 50V breakdown voltage

Hersteller:

Micro Crystal
Herstellerteil #:

JANTX2N2222A
Datenblatt:

JANTX2N2222A Datenblatt (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

800 mA
Voltage - Collector Emitter Breakdown (Max):

50 V
Vce Saturation (Max) @ Ib, Ic:

1V @ 50mA, 500mA
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JANTX2N2222A Information

Description

The JANTX2N2222A is a bipolar transistor, specifically designed as an NPN small-signal BJT for high-voltage switching applications. Manufactured by Micro Crystal, this transistor boasts features such as low leakage current, high current gain, and RoHS compliance. The device comes in a standard TO-18 package with operating temperatures ranging from -65°C to 200°C. It can handle up to 600mA continuous current, making it suitable for various applications like switching circuits, RF amplifiers, motor drivers, signal processing, automotive electronics, general-purpose use, telecommunication systems, and sensor circuits. The JANTX2N2222A is available in different grades including JANTXV, JANS, JAN, and JANTX. With its high voltage switching capability, this transistor proves to be a reliable component for various electronic designs. Its versatility and reliability make it an excellent addition to any electronics enthusiast's toolkit.

Package

According to the product information, the package types for JANTX2N2222A are TO-206AA and TO-18-3 Metal Can.

Pinout

The JANTX2N22A is a NPN bipolar transistor in a TO-18 package. It has 3 pins:

Base (B): Input pin for controlling the transistor's operation
Collector (C): Output pin that collects current when the transistor is conducting
Emitter (E): Output pin that emits current when the transistor is conducting

This transistor is suitable for high-voltage switching, RF amplifiers, and general-purpose applications. Its parameters include a collector-emitter voltage of 22V, a collector current of 600mA, and a power dissipation of 1W.

Manufacturer

The manufacturer of the JANTX2N22A is Micro Crystal, which is a semiconductor component supplier.

Applications

The JANTX2N2222A bipolar transistor is suitable for various applications, including:

Switching circuits
RF amplifiers
High-quality motor drivers
Signal processing
Automotive electronics
General-purpose use
Telecommunication systems
Sensor circuits
Reliable audio amplifiers

Equivalent

The equivalent products of JANTX2N22A are:

NXP BUX72
STMicroelectronics BC817-16
ON Semiconductor MMBT2222A
Fairchild Semiconductor PN2222A

These transistors have similar characteristics and applications as the JANTX2N22A.

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Transistor Type	NPN
Current - Collector (Ic) (Max)	800 mA	Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA	Current - Collector Cutoff (Max)	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Power - Max	500 mW
Frequency - Transition	-	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Base Product Number	2N2222
Product Category:	Bipolar Transistors - BJT	Mounting Style:	Through Hole
Transistor Polarity:	NPN	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	50 V	Collector- Base Voltage VCBO:	75 V
Emitter- Base Voltage VEBO:	6 V	Collector-Emitter Saturation Voltage:	300 mV
Maximum DC Collector Current:	800 mA	Pd - Power Dissipation:	500 mW
Minimum Operating Temperature:	- 65 C	Maximum Operating Temperature:	+ 200 C
Continuous Collector Current:	800 mA	DC Collector/Base Gain hfe Min:	50
Product Type:	BJTs - Bipolar Transistors	Factory Pack Quantity:	338
Subcategory:	Transistors	Technology:	Si
Package/Case	TO-18-3

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