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FDC655BN +BOM

30V 6.3A 1.6W 25mΩ@10V,6.3A 3V@250uA N Channel SSOT-6 MOSFETs ROHS

Hersteller:

Onsemi
Herstellerteil #:

FDC655BN
Datenblatt:

FDC655BN Datenblatt (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDC655BN

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDC655BN Allgemeine Beschreibung

Engineered for excellence, the FDC655BN stands out as a top-of-the-line N-Channel Logic Level MOSFET that excels in demanding environments where efficiency and performance are paramount. Its cutting-edge PowerTrench process ensures that it delivers minimal on-state resistance and superior switching capabilities, making it ideal for applications that require precision and reliability. Invest in the FDC655BN for your low voltage or battery powered projects and experience the difference that advanced technology can make

Hauptmerkmale

Max r_DS(ON) = 25 mΩ V_GS = 10V, I_D = 6.3A
Max r_DS(ON) = 33 mΩ V_GS = 4.5V, I_D = 5.5A
Fast switching
Low gate charge
High performance trench technology for extremely low r_DS(ON)
Termination is Lead-free and RoHS Compliant

Anwendung

This product is general usage and suitable for many different applications.

Spezifikationen

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	6.3 A
Rds On - Drain-Source Resistance	25 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	13 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.6 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDC655BN
Configuration	Single	Fall Time	4 ns
Forward Transconductance - Min	20 S	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	4 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	22 ns	Typical Turn-On Delay Time	8 ns
Width	1.6 mm	Part # Aliases	FDC655BN_NL
Unit Weight	0.001270 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..