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HFA3128RZ +BOM

RF Transistor 5 PNP 15V 65mA 5.5GHz 150mW Surface Mount 16-QFN (3x3)

Hersteller:

RENESAS ELECTRONICS CORP
Herstellerteil #:

HFA3128RZ
Datenblatt:

HFA3128RZ Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

16
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an HFA3128RZ

Email: [email protected]

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Tel: +852 95804164

HFA3128RZ Allgemeine Beschreibung

Support is limited to customers who have already adopted these products.

The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a f_T of 8GHz while the PNP transistors provide a f_T of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.

Hauptmerkmale

NPN transistor (f_T) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN current gain (h_FE) . . . . . . . . . . . . . . . . . . . . . . . . 130
NPN early voltage (V_A). . . . . . . . . . . . . . . . . . . . . . . . 50V
PNP transistor (f_T) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
PNP current gain (h_FE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
PNP early voltage (V_A). . . . . . . . . . . . . . . . . . . . . . . . .20V
Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
Complete isolation between transistors
Pin compatible with industry standard 3XXX series arrays
Pb-free (RoHS compliant)

Spezifikationen

Source Content uid	HFA3128RZ	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	16
Reach Compliance Code	compliant	ECCN Code	EAR99
Additional Feature	LOW NOISE	Collector-Emitter Voltage-Max	8 V
Configuration	SEPARATE, 5 ELEMENTS	Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
JESD-30 Code	S-PQCC-N16	JESD-609 Code	e3
Moisture Sensitivity Level	2	Number of Elements	5
Number of Terminals	16	Polarity/Channel Type	PNP
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	NO LEAD	Terminal Position	QUAD
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	5500 MHz	Product Category	RF Bipolar Transistors
Series	HFA3128	Transistor Type	Bipolar
Technology	Si	Transistor Polarity	PNP
Operating Frequency	5.5 GHz	DC Collector/Base Gain hfe Min	20
Collector- Emitter Voltage VCEO Max	8 V	Emitter- Base Voltage VEBO	5.5 V
Continuous Collector Current	65 mA	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C	Collector- Base Voltage VCBO	12 V
DC Current Gain hFE Max	20 at 10 mA at 2 V	Gain Bandwidth Product fT	5500 MHz (Typ)
Height	0.9 mm	Length	3 mm
Maximum DC Collector Current	65 mA	Moisture Sensitive	Yes
Pd - Power Dissipation	150 mW	Product Type	RF Bipolar Transistors
Factory Pack Quantity	100	Subcategory	Transistors
Type	RF Bipolar Small Signal	Width	3 mm

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