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AS4C128M32MD2A-18BIN +BOM

134-Pin DDR2 SDRAM DRAM Chip with 4Gbit capacity and 128M x 32 configuration

AS4C128M32MD2A-18BIN Allgemeine Beschreibung

The AS4C128M32MD2A-18BIN is a cutting-edge synchronous dynamic random-access memory (SDRAM) module designed for high-speed memory access in computing and networking applications. With a capacity of 128 megabytes and a 32 meg x 32-bit configuration, this module provides efficient memory management and improved performance in data-intensive applications. It operates at a speed of 166MHz (PC133) with a CAS latency of 2.5, making it ideal for demanding tasks that require rapid memory access

Hauptmerkmale

  • Organization: 1,048,576 words × 4 bits
  • High speed
  • - 40/50/60/70 ns RAS access time
  • - 20/25/30/35 ns column address access time
  • - 10/13/15/18 ns CAS access time
  • Low power consumption
  • - Active: 385 mW max (-60)
  • - Standby: 5.5 mW max, CMOS I/O
  • Fast page mode (AS4C14400) or EDO (AS4C14405)
  • 1024 refresh cycles, 16 ms refresh interval
  • - RAS-only or CAS-before-RAS refresh
  • Read-modify-write
  • TTL-compatible, three-state I/O
  • JEDEC standard packages
  • - 300 mil, 20/26-pin SOJ
  • - 300 mil, 20/26-pin TSOP
  • Single 5V power supply
  • ESD protection ≥ 2001V
  • Latch-up current ≥ 200 mA

Spezifikationen

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.36
Factory Lead Time 35 Weeks Access Mode SINGLE BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY Clock Frequency-Max (fCLK) 533 MHz
I/O Type COMMON Interleaved Burst Length 4,8,16
JESD-30 Code R-PBGA-B134 Length 11.5 mm
Memory Density 4294967296 bit Memory IC Type DDR2 DRAM
Memory Width 32 Moisture Sensitivity Level 3
Number of Functions 1 Number of Ports 1
Number of Terminals 134 Number of Words 134217728 words
Number of Words Code 128000000 Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 128MX32 Output Characteristics 3-STATE
Refresh Cycles 8192 Seated Height-Max 1 mm
Self Refresh YES Sequential Burst Length 4,8,16
Standby Current-Max 0.001 A Standby Voltage-Min 1.14 V
Supply Current-Max 0.36 mA Supply Voltage-Max (Vsup) 1.3 V
Supply Voltage-Min (Vsup) 1.14 V Supply Voltage-Nom (Vsup) 1.2 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Form BALL
Terminal Pitch 0.65 mm Terminal Position BOTTOM
Width 10 mm

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