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AS4C512M16D4-75BIN +BOM

It is a high-density memory module suitable for various applications

AS4C512M16D4-75BIN Allgemeine Beschreibung

The AS4C512M16D4-75BIN stands out as a high-performance DDR4 SDRAM module that excels in both speed and efficiency. Its 16 banks of 16Mx16 configuration, coupled with a CAS latency of 17 cycles, ensure smooth operation even under demanding workloads. With a low supply voltage of 1.2V, this module not only reduces power consumption but also enhances system efficiency and reliability. Additionally, its compact 96-ball FBGA package design makes it easy to integrate into various system designs, while its RoHS compliance and wide temperature range add to its versatility for different environments

Spezifikationen

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 1333 MHz I/O Type COMMON
Interleaved Burst Length 4,8 JESD-30 Code R-PBGA-B96
Length 13 mm Memory Density 8589934592 bit
Memory IC Type DDR4 DRAM Memory Width 16
Number of Functions 1 Number of Ports 1
Number of Terminals 96 Number of Words 536870912 words
Number of Words Code 512000000 Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C Operating Temperature-Min -40 °C
Organization 512MX16 Output Characteristics 3-STATE
Seated Height-Max 1.2 mm Self Refresh YES
Sequential Burst Length 4,8 Standby Current-Max 0.04 A
Supply Current-Max 0.43 mA Supply Voltage-Max (Vsup) 1.26 V
Supply Voltage-Min (Vsup) 1.14 V Supply Voltage-Nom (Vsup) 1.2 V
Surface Mount YES Technology CMOS
Terminal Form BALL Terminal Pitch 0.8 mm
Terminal Position BOTTOM Width 7.5 mm

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