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BAW56LT1G +BOM

70V dual common anode diode for switching applications

Hersteller:

Onsemi
Herstellerteil #:

BAW56LT1G
Datenblatt:

BAW56LT1G Datenblatt (PDF)
Compliance:

PbAHP
Case Outline:

318-08
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BAW56LT1G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

BAW56LT1G Allgemeine Beschreibung

The BAW56LT1G is a dual common cathode ultra-fast switching diode package. It consists of two diodes in a SOT-23 surface mount package. These diodes have a forward current of 200 mA, a reverse voltage of 70 V, and a forward voltage drop of 1 V at 10 mA. The BAW56LT1G is ideal for high speed switching applications, such as rectification, signal demodulation, and voltage clamping. It has a fast switching speed of 4 ns, low reverse recovery time of 4 ns, and low capacitance of 4 pF. This diode package is RoHS compliant and has a matte tin finish. It is suitable for high-density applications due to its small package size of 2.9 mm x 1.3 mm x 1.1 mm. The BAW56LT1G is designed for use in general purpose and low voltage applications, such as mobile phones, cameras, and portable electronic devices. It is also commonly used in power management circuits, RF circuits, and voltage regulation circuits.

Hauptmerkmale

This BAW56LT1G diode has a maximum forward current of 200 mA and peak repetitive reverse voltage of 75 V.
The forward voltage drop is very low at 0.7 V making it suitable for high-frequency switching applications.
It's packaged in a compact SOT-23 package, ideal for surface-mount applications.

Anwendung

BAW56LT1G is versatile
High-speed diode for data
Used in power management

Spezifikationen

Status	Active	Compliance	PbAHP
Case Outline	318-08	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	N
Configuration	Common Anode	VR Min (V)	70
VF Max (V)	1	IR Max (µA)	2.4
IF Max (A)	0.2	trr Max (ns)	6
CD Max (pF)	2	Pricing ($/Unit)	$0.0101Sample

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