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Siehe Technische Spezifikationen

FM25L04B-G +BOM

4 kilobit Ferroelectric RAM memory device for serial data storage

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

FM25L04B-G
Datenblatt:

FM25L04B-G Datenblatt (PDF)
Series:

F-RAM™
Memory Type:

Non-Volatile
Memory Format:

FRAM
Technology:

FRAM (Ferroelectric RAM)
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FM25L04B-G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FM25L04B-G Allgemeine Beschreibung

The FM25L04B-G, a 4Kbit serial EEPROM memory chip manufactured by Cypress Semiconductor, offers a wide voltage range of 1.8V to 5.5V, making it suitable for various applications. Its high-speed serial interface supports clock frequencies up to 5MHz, and the page write capability of up to 32 bytes allows for efficient data storage and retrieval. With an industry-standard SPI interface, the FM25L04B-G can be easily integrated into existing systems. The chip has a guaranteed minimum of 1 million write cycles and a data retention period of at least 100 years, making it ideal for applications with frequent read and write operations, such as automotive, consumer electronics, and industrial sectors. It comes in a compact 8-pin SOIC package, making it easy to incorporate into space-constrained designs. Additionally, it is RoHS compliant and operates over a wide temperature range of -40°C to 85°C, ensuring its reliability and durability in various environments

Spezifikationen

Category	Integrated Circuits (ICs)MemoryMemory	Series	F-RAM™
Memory Type	Non-Volatile	Memory Format	FRAM
Technology	FRAM (Ferroelectric RAM)	Memory Size	4Kbit
Memory Organization	512 x 8	Memory Interface	SPI
Clock Frequency	20 MHz	Write Cycle Time - Word, Page	-
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	FM25L04
Pin Count	8	Released Date	Dec 13, 2017
Last Modified Date	Mar 7, 2023 4:10 PM UTC

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