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Siehe Technische Spezifikationen

GP1UX51QS +BOM

Infrared receivers with plastic housing and 5V power input, specifically designed to match IS1U60 footprint and operate at 40kHz

Hersteller:

Sharp Microelectronics
Herstellerteil #:

GP1UX51QS
Datenblatt:

GP1UX51QS Datenblatt (PDF)
Operating-Temperature:

-10°C ~ 70°C (TA)
:

40.0kHz
Mounting-Type:

600μA
Voltage-Supply:

Side View
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an GP1UX51QS

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

GP1UX51QS Allgemeine Beschreibung

In the realm of consumer electronics, the GP1UX51QS infrared emitting diode stands out as a high-speed and versatile component. Its peak wavelength of 950nm allows for the emission of invisible infrared light, making it an ideal choice for a wide range of applications such as remote controls, cameras, and sensors. The diode's compact surface-mount package, measuring just 3.2mm x 2.35mm x 2.2mm, offers designers the flexibility to integrate it seamlessly into small electronic devices. With a typical radiant intensity of 35mW/sr and a low forward voltage of 1.3V, the GP1UX51QS is also remarkably energy-efficient, making it well-suited for battery-operated devices. Its fast response time of 30ns further enhances its appeal, as it is capable of delivering quick and precise control in demanding applications. Furthermore, the diode's wide operating temperature range of -40°C to 85°C ensures reliable performance in various environmental conditions, providing peace of mind to designers and manufacturers

Spezifikationen

Product Category	Photodetectors	Series	-
Operating-Temperature	-10°C ~ 70°C (TA)		40.0kHz
Mounting-Type	600μA	Voltage-Supply	Side View

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