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Siehe Technische Spezifikationen

HIP6603BCBZ-T +BOM

Advanced MOSFET driver technology for robust and reliable operatio

Hersteller:

Renesas Electronics Corporation
Herstellerteil #:

HIP6603BCBZ-T
Datenblatt:

HIP6603BCBZ-T Datenblatt (PDF)
Programmabe:

Not Verified
Driven Configuration:

Half-Bridge
Channel Type:

Synchronous
Number Of Drivers:

2

HIP6603BCBZ-T Allgemeine Beschreibung

Exclusive to customers who have embraced these products, the HIP6601B, HIP6603B, and HIP6604B drivers are engineered for driving power N-Channel MOSFETs in synchronous rectified buck converter topologies with precision and efficiency. These drivers, when combined with the HIP63xx or ISL65xx series of controllers and MOSFETs, create a robust solution for core-voltage regulation in advanced microprocessor systems. The HIP6601B's ability to drive the lower gate to 12V and independently adjust the upper gate drive voltage provides tailored control for specific applications. In comparison, the HIP6603B offers dual gate driving within a flexible voltage range, enabling precise optimization of switching and conduction losses. Lastly, the HIP6604B's configurable nature allows it to adapt to varying design requirements, catering to a wide range of application scenarios

Hauptmerkmale

Efficient Power Conversion
Fault Tolerant System Design
Robust Reliability Enhancement
High-Speed Data Transmission
Low-Power Consumption Optimized
Precise Timing Control Enabled

Spezifikationen

Series	-	Programmabe	Not Verified
Driven Configuration	Half-Bridge	Channel Type	Synchronous
Number of Drivers	2	Gate Type	N-Channel MOSFET
Voltage - Supply	10.8V ~ 13.2V	Logic Voltage - VIL, VIH	-
Current - Peak Output (Source, Sink)	-	Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	15 V	Rise / Fall Time (Typ)	20ns, 20ns
Operating Temperature	0°C ~ 125°C (TJ)	Mounting Type	Surface Mount
Base Product Number	HIP6603

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