Bezahlverfahren
HSCH-5312 +BOM
Small form factor RF diode Schottky suitable for applications requiring 4V voltage and 150mW power, housed in a Case 07 package with 2 pins
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Hersteller:
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Herstellerteil #:
HSCH-5312
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Datenblatt:
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Series:
HSCH-53xx
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Diode Type:
Schottky - Single
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Voltage - Peak Reverse (Max):
4V
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Capacitance @ Vr, F:
0.15pF @ 0V, 1MHz
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for HSCH-5312, guaranteed quotes back within 12hr.
Verfügbarkeit: 4243 Stck
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HSCH-5312 Allgemeine Beschreibung
The HSCH-5312 is a game-changer in the field of optical communication, offering unmatched performance and reliability for demanding applications. Its silicon waveguide design allows for maximum efficiency in signal detection, ensuring optimal data transmission in even the most challenging environments
Spezifikationen
Category | Discrete Semiconductor ProductsDiodesRF Diodes | Series | HSCH-53xx |
Diode Type | Schottky - Single | Voltage - Peak Reverse (Max) | 4V |
Capacitance @ Vr, F | 0.15pF @ 0V, 1MHz | Resistance @ If, F | 16Ohm @ 5mA, 1MHz |
Power Dissipation (Max) | 150 mW | Operating Temperature | -65°C ~ 175°C |
Base Product Number | HSCH | Product Category: | RF Detector |
Type: | Schottky Detector Diode | Frequency Range: | 26 GHz |
Configuration: | Single | Operating Supply Voltage: | 500 mV |
Maximum Diode Capacitance: | 0.15 pF | Typical Voltage Sensitivity: | 6.6 mV/uW |
Technology: | Si | Maximum Operating Temperature: | + 175 C |
Minimum Operating Temperature: | - 65 C | Mounting Style: | SMD/SMT |
Packaging: | Bulk | Pd - Power Dissipation: | 150 mW |
Product Type: | RF Detector | Series: | HSCH |
Factory Pack Quantity: | 10 | Subcategory: | Wireless & RF Integrated Circuits |
Typical Tangential Sensitivity: | - 54 dBm | Typical Video Resistance: | 1.4 kOhms |
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In Stock: 4.243
Minimum Order: 1
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