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HY57V161610DTC-7 +BOM

Compact yet powerful synchronous DRAM solution offering 1MX16 capacity, 6ns speed, CMOS technology, and housed in a PDSO50 package measuring 0

Hersteller:

SAMSUNG
Herstellerteil #:

HY57V161610DTC-7
Datenblatt:

HY57V161610DTC-7 Datenblatt (PDF)
Paket/Koffer:

TSOP-50
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an HY57V161610DTC-7

HY57V161610DTC-7 Allgemeine Beschreibung

DESCRIPTIONTHE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipeline design is not restricted by a `2N` rule.)FEATURES • Single 3.0V to 3.6V power supply • All device pins are compatible with LVTTL interface • JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch • All inputs and outputs referenced to positive edge of system clock • Data mask function by UDQM/LDQM • Internal two banks operation • Auto refresh and self refresh • 4096 refresh cycles / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst - 1, 2, 4 and 8 for Interleave Burst • Programmable CASLatency ; 1, 2, 3 Clocks

Hauptmerkmale

Single 3.0V to 3.6V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
All inputs and outputs referenced to positive edge of system clock
Data mask function by UDQM/LDQM
Internal two banks operation
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
Programmable CASLatency ; 1, 2, 3 Clocks

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