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High voltage switching transistor chip
TO-220Hersteller:
Herstellerteil #:
IRG4BC20UD
Datenblatt:
Place:
Mexico
Launch_date:
Jul 11, 2000
Last_inspection_date:
+90
Supplier_cage_code:
C6489
EDA/CAD Modelle:
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
The IRG4BC20UD is an Insulated Gate Bipolar Transistor (IGBT) that stands out for its high power switching capabilities. With a collector-emitter voltage rating of 600V and a continuous collector current rating of 20A, this IGBT is a go-to choice for applications such as motor control, power supply, and renewable energy systems. Its compact TO-220AB package makes it easy to mount and heatsink, while its low on-state voltage drop and high switching speed ensure efficiency and speed in operation. Moreover, its wide operating temperature range of -55°C to 150°C and built-in protection features like overcurrent and overvoltage protection make it suitable for demanding industrial environments
place | Mexico | launch_date | Jul 11, 2000 |
last_inspection_date | +90 | supplier_cage_code | C6489 |
htsusa | schedule_b | 8541290080 | |
ppap | False | aec | |
Series | - | IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 13 A |
Current - Collector Pulsed (Icm) | 52 A | Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 6.5A |
Power - Max | 60 W | Switching Energy | 160µJ (on), 130µJ (off) |
Input Type | Standard | Gate Charge | 27 nC |
Td (on/off) @ 25°C | 39ns/93ns | Test Condition | 480V, 6.5A, 50Ohm, 15V |
Reverse Recovery Time (trr) | 37 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
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