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Siehe Technische Spezifikationen

IS61C25616AL-10TLI +BOM

The IS61C25616AL-10TLI is a reliable and versatile memory solution for various electronic devices and systems

Hersteller:

ISSI, Integrated Silicon Solution Inc
Herstellerteil #:

IS61C25616AL-10TLI
Datenblatt:

IS61C25616AL-10TLI Datenblatt (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
Technology:

SRAM - Asynchronous

IS61C25616AL-10TLI Allgemeine Beschreibung

When it comes to memory chips, the IS61C25616AL-10TLI stands out for its exceptional speed and efficiency. This high-speed, low-power DRAM chip offers a capacity of 256K x 16 and operates at an impressive speed of 10 nanoseconds. Additionally, its standby current of 10mA makes it a standout choice for a wide range of applications, from industrial to automotive and consumer electronics. Designers and developers can rely on this chip's superior performance and reliability to meet the demanding requirements of their projects

Hauptmerkmale

HIGH SPEED: (IS61/64C25616AL)
High-speed access time: 10ns, 12 ns
Low Active Power: 150 mW (typical)
Low Standby Power: 10 mW (typical) CMOS standby
LOW POWER: (IS61/64C25616AS)
High-speed access time: 25 ns
Low Active Power: 75 mW (typical)
Low Standby Power: 1 mW (typical) CMOS standby
TTL compatible interface levels
Single 5V ± 10% power supply
Fully static operation: no clock or refresh required
Available in 44-pin SOJ package and 44-pin TSOP (Type II)
Commercial, Industrial and Automotive temperature ranges available
Lead-free available

Spezifikationen

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	SRAM	Technology	SRAM - Asynchronous
Memory Size	4Mbit	Memory Organization	256K x 16
Memory Interface	Parallel	Write Cycle Time - Word, Page	10ns
Access Time	10 ns	Voltage - Supply	4.5V ~ 5.5V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	IS61C25616

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