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IS61LV25616AL-10BI +BOM

Mini-BGA Package

Hersteller:

INTEGRATED SILICON SOLUTION INC
Herstellerteil #:

IS61LV25616AL-10BI
Datenblatt:

IS61LV25616AL-10BI Datenblatt (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

48
Reach Compliance Code:

compliant

IS61LV25616AL-10BI Allgemeine Beschreibung

The IS61LV25616AL-10BI is a top-of-the-line 256K x 16 (4-MBIT) synchronous static RAM, engineered to meet the exacting power and performance specifications of contemporary portable and battery-operated applications. Its voltage range of 2.375V to 2.625V, along with a fast access time of 10ns and low standby current consumption, makes it an ideal choice for power-sensitive systems. With the ability to operate on a low voltage power supply and low operating current, the IS61LV25616AL-10BI is perfectly suited for mobile devices, handheld electronics, and other battery-powered applications. Additionally, its synchronous interface simplifies integration into various systems, offering unparalleled convenience and ease of use for developers. The inclusion of a burst read/write mode facilitates high-speed data transfer, boosting overall system performance. Encased in a durable 48-pin TSOP-II package and boasting an industrial temperature range of -40°C to 85°C, the IS61LV25616AL-10BI ensures reliability and versatility for a wide array of industrial and commercial applications

Hauptmerkmale

High-speed access time:
— 10, 12 ns
CMOS low power operation
Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available

Spezifikationen

Pbfree Code	No	Part Life Cycle Code	Obsolete
Pin Count	48	Reach Compliance Code	compliant
ECCN Code	3A991.B.2.A	HTS Code	8542.32.00.41
Access Time-Max	10 ns	I/O Type	COMMON
JESD-30 Code	R-PBGA-B48	JESD-609 Code	e0
Length	10 mm	Memory Density	4194304 bit
Memory IC Type	STANDARD SRAM	Memory Width	16
Moisture Sensitivity Level	3	Number of Functions	1
Number of Terminals	48	Number of Words	262144 words
Number of Words Code	256000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	256KX16	Output Characteristics	3-STATE
Parallel/Serial	PARALLEL	Power Supplies	3.3 V
Qualification Status	Not Qualified	Seated Height-Max	1.2 mm
Standby Current-Max	0.015 A	Standby Voltage-Min	2 V
Supply Current-Max	0.11 mA	Supply Voltage-Max (Vsup)	3.63 V
Supply Voltage-Min (Vsup)	3.135 V	Supply Voltage-Nom (Vsup)	3.3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	TIN LEAD
Terminal Form	BALL	Terminal Pitch	0.75 mm
Terminal Position	BOTTOM	Width	8 mm

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..