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Siehe Technische Spezifikationen

JS28F256J3F105A +BOM

32M x 8bit memory

Hersteller:

Micron Technology Inc.
Herstellerteil #:

JS28F256J3F105A
Datenblatt:

JS28F256J3F105A Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

56
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an JS28F256J3F105A

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JS28F256J3F105A Allgemeine Beschreibung

In addition to its impressive performance capabilities, the JS28F256J3F105A chip also prioritizes data protection. It features a hardware data protection mechanism and offers various software protection options, ensuring that your valuable data remains secure. Furthermore, this flash memory chip utilizes a 16-bit data interface, further enhancing its compatibility and usability in a wide range of devices and applications. Its compliance with RoHS standards also demonstrates Intel's commitment to environmental sustainability

Hauptmerkmale

Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	56	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	105 ns	Alternate Memory Width	8
JESD-30 Code	R-PDSO-G56	JESD-609 Code	e3
Length	18.4 mm	Memory Density	268435456 bit
Memory IC Type	FLASH	Memory Width	16
Moisture Sensitivity Level	3	Number of Functions	1
Number of Terminals	56	Number of Words	16777216 words
Number of Words Code	16000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	16MX16	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	260	Programming Voltage	2.7 V
Qualification Status	Not Qualified	Seated Height-Max	1.2 mm
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	Matte Tin (Sn)	Terminal Form	GULL WING
Terminal Pitch	0.5 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Type	NOR TYPE
Width	14 mm

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