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JS28F512P30EFA +BOM

NOR Flash Memory with 512Mbit Capacity and Parallel Interface

Hersteller:

Micron Technology Inc.
Herstellerteil #:

JS28F512P30EFA
Datenblatt:

JS28F512P30EFA Datenblatt (PDF)
Series:

Axcell™
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JS28F512P30EFA Allgemeine Beschreibung

Intel's JS28F512P30EFA flash memory chip is a top-of-the-line solution for demanding applications that require efficient data handling and storage. Its compact 56-pin TSOP package makes it easy to incorporate into various circuit designs, while its 512 megabit capacity provides ample space for storing critical information. With its fast access times and wide operating temperature range, this chip is a reliable choice for industrial and automotive use

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Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Spezifikationen

Series	Axcell™	Programmabe	Not Verified
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR	Memory Size	512Mbit
Memory Organization	32M x 16	Memory Interface	Parallel
Clock Frequency	40 MHz	Write Cycle Time - Word, Page	110ns
Access Time	110 ns	Voltage - Supply	1.7V ~ 2V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	JS28F512P30

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..