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JS28F512P33BFD +BOM

TSOP-56 NOR flash memory chip with RoHS compliance"

Hersteller:

Micron Technology Inc.
Herstellerteil #:

JS28F512P33BFD
Datenblatt:

JS28F512P33BFD Datenblatt (PDF)
Series:

Axcell™
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JS28F512P33BFD Allgemeine Beschreibung

The JS28F512P33BFD flash memory device from Intel is a high-performance solution for reliable and fast data storage in a variety of applications. With its 512 megabit capacity and 90 ns typical access time, it meets the demands of modern data-intensive tasks while operating on a supply voltage range of 2.7V to 3.6V. Its parallel interface and maximum clock frequency of 33 MHz ensure high-speed data transfer, while the symmetrical block architecture and flexible erase capability allow for efficient data management and storage. The 48-pin TSOP package makes it suitable for space-constrained designs, and it also features built-in hardware and software data protection for data integrity and security

Hauptmerkmale

Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Spezifikationen

Series	Axcell™	Programmabe	Not Verified
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR	Memory Size	512Mbit
Memory Organization	32M x 16	Memory Interface	Parallel
Clock Frequency	40 MHz	Write Cycle Time - Word, Page	105ns
Access Time	105 ns	Voltage - Supply	2.3V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	JS28F512P33

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