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32X16 Synchronous DRAM chip with 5.4ns speed, CMOS construction, and PDSO54 package
Hersteller:
Samsung Semiconductor
Herstellerteil #:
K4S511632B-UC75
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
compliant
ECCN Code:
EAR99
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The K4S511632B-UC75 from Samsung Electronics is a top-of-the-line SDRAM chip designed to meet the high-speed memory requirements of today's electronic devices. With a storage capacity of 16MB and a DDR architecture, this chip offers exceptional data transfer rates of up to 266MB/s, ensuring smooth and efficient performance. Its programmable burst length feature and low CAS latency provide flexibility in accessing data, making it an ideal choice for desktops, laptops, servers, and networking equipment. The K4S511632B-UC75's temperature range of -40°C to 85°C makes it suitable for operation in various environmental conditions
Pbfree Code | Yes | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8542.32.00.28 | Access Time-Max | 5.4 ns |
Clock Frequency-Max (fCLK) | 133 MHz | I/O Type | COMMON |
Interleaved Burst Length | 1,2,4,8 | JESD-30 Code | R-PDSO-G54 |
Memory Density | 536870912 bit | Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 16 | Moisture Sensitivity Level | 3 |
Number of Terminals | 54 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Temperature-Max | 70 °C |
Organization | 32MX16 | Output Characteristics | 3-STATE |
Peak Reflow Temperature (Cel) | 260 | Power Supplies | 3.3 V |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Sequential Burst Length | 1,2,4,8 | Standby Current-Max | 0.002 A |
Supply Current-Max | 0.2 mA | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | COMMERCIAL | Terminal Form | GULL WING |
Terminal Pitch | 0.8 mm | Terminal Position | DUAL |
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