Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

LH28F160S5HNS-L70 +BOM

NOR Flash Memory

  • Hersteller:

    Sharp Microelectronics

  • Herstellerteil #:

    LH28F160S5HNS-L70

  • Datenblatt:

    LH28F160S5HNS-L70 Datenblatt (PDF) pdf-icon

  • Programmabe:

    Not Verified

  • Memory Type:

    Non-Volatile

  • Memory Format:

    FLASH

  • Technology:

    FLASH

LH28F160S5HNS-L70 Allgemeine Beschreibung

The Samsung LH28F160S5HNS-L70 NAND flash memory chip is a powerhouse when it comes to storage capacity and reliability. With 16 megabytes of space, this chip is perfect for a variety of industries, from automotive to consumer electronics. Its 3.3-volt power supply ensures efficient operation, while the high-speed synchronous data transfer interface allows for quick read and write speeds. Additionally, the built-in error correction and bad block management features guarantee that your data remains intact and secure

Hauptmerkmale

  • Smart 5 technology
  • – 5  V  VCC
  • – 5  V  VPP
  • High speed write performance
  • – Two 32-byte page buffers
  • – 2 µs/byte write transfer rate
  • Common Flash Interface (CFI)
  • – Universal & upgradable interface
  • Scalable Command Set (SCS)
  • High performance read access time
  • LH28F160S5-L70
  • – 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)
  • LH28F160S5H-L70
  • – 70 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
  • LH28F160S5-L10/S5H-L10
  • – 100 ns (5.0±0.5 V)
  • Enhanced automated suspend options
  • – Write suspend to read
  • – Block erase suspend to write
  • – Block erase suspend to read
  • Enhanced data protection features
  • – Absolute protection with VPP = GND
  • – Flexible block locking
  • – Erase/write lockout during power transitions
  • SRAM-compatible write interface
  • User-configurable x8 or x16 operation
  • High-density symmetrically-blocked architecture
  • – Thirty-two 64 k-byte erasable blocks
  • Enhanced cycling capability
  • – 100 000 block erase cycles
  • – 3.2 million block erase cycles/chip
  • Low power management
  • – Deep power-down mode
  • – Automatic power saving mode decreases ICC
  • in static mode
  • Automated write and erase
  • – Command user interface
  • – Status register
  • ETOXTM∗ V nonvolatile flash technology
  • Packages
  • – 56-pin TSOP Type I (TSOP056-P-1420)
  • Normal bend/Reverse bend
  • – 56-pin SSOP (SSOP056-P-0600)★
  • [LH28F160S5-L]
  • – 64-ball CSP (FBGA064-P-0811)
  • – 64-pin SDIP (SDIP064-P-0750)★

Spezifikationen

Series - Programmabe Not Verified
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH Memory Size 16Mbit
Memory Organization 2M x 8, 1M x 16 Memory Interface Parallel
Write Cycle Time - Word, Page 70ns Access Time 70 ns
Voltage - Supply 4.75V ~ 5.25V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount Base Product Number LH28F160

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

payment Zahlung

Bezahlverfahren

hsbc
TT/Überweisung
paypal
Paypal
wu
Western Union
mg
Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]
Versand Versand & Verpackung

Versandart

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie Garantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Rezensionen

You need to log in to reply. Anmelden | Melden Sie sich an