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LS4448GS08 +BOM

Diodes - General Purpose, Power, Switching 100V Io/150mA 2.0 Amp IFSM

LS4448GS08 Allgemeine Beschreibung

One of the key advantages of the LS4448GS08 is its low forward voltage drop and high switching speed, which make it ideal for applications where efficiency and speed are critical. The diode is housed in a surface-mount SOD-80 package, allowing for easy integration into automated assembly processes for efficient production. Its small size and dependable performance make it a popular choice for industries such as telecommunications, consumer electronics, and instrumentation

Hauptmerkmale

  • This diode features a fast switching speed and low leakage current
  • The LS44GS08 is suitable for high-speed switching applications
  • Its small surface-mount package makes it ideal for space-constrained designs
  • This diode can handle maximum repetitive peak reverse voltage of 100V
  • The forward continuous current rating is up to 150mA
  • This device is suitable for signal and data processing circuits

Anwendung

  • Customizable software packages
  • Integrated hardware solutions
  • Streamlined IT processes

Spezifikationen

Pbfree Code Yes Part Life Cycle Code Active
Reach Compliance Code Factory Lead Time 32 Weeks
Case Connection ISOLATED Configuration SINGLE
Diode Element Material SILICON Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.72 V JESD-30 Code O-LELF-R2
JESD-609 Code e2 Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 2 A Number of Elements 1
Number of Terminals 2 Operating Temperature-Max 175 °C
Output Current-Max 0.15 A Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.5 W Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 100 V Reverse Recovery Time-Max 0.008 µs
Surface Mount YES Terminal Finish Tin/Silver (Sn/Ag)
Terminal Form WRAP AROUND Terminal Position END
Time@Peak Reflow Temperature-Max (s) 30

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