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M29DW323DT70N6E +BOM

M x 8/2M x 16 configuration for high-speed data transfer

M29DW323DT70N6E Allgemeine Beschreibung

The M29DW323DT70N6E Flash memory IC from ST Microelectronics is a versatile and efficient memory solution for a wide range of electronic devices. With its 32-Mbit capacity and dual bank architecture, this IC allows for simultaneous read and write operations, increasing overall performance and functionality. The high-speed interface and fast page programming time of 10µs make data transfer quick and efficient, while the embedded erase block size enhances memory management capabilities. Additionally, the low power consumption of the M29DW323DT70N6E ensures energy efficiency, making it ideal for battery-powered devices or applications where power consumption is a concern

Spezifikationen

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 48 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 70 ns Additional Feature TOP BOOT BLOCK
Alternate Memory Width 8 Boot Block TOP
Command User Interface YES Common Flash Interface YES
Data Polling YES JESD-30 Code R-PDSO-G48
JESD-609 Code e3 Length 18.4 mm
Memory Density 33554432 bit Memory IC Type FLASH
Memory Width 16 Number of Functions 1
Number of Sectors/Size 8,63 Number of Terminals 48
Number of Words 2097152 words Number of Words Code 2000000
Operating Mode ASYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 2MX16
Parallel/Serial PARALLEL Programming Voltage 3 V
Qualification Status Not Qualified Ready/Busy YES
Seated Height-Max 1.2 mm Sector Size 8K,64K
Standby Current-Max 0.0001 A Supply Current-Max 0.02 mA
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Pitch 0.5 mm Terminal Position DUAL
Toggle Bit YES Type NOR TYPE
Width 12 mm

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