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M50100TB1200 +BOM

Diode module with bridge rectifier configuration for handling 1.2KV voltage levels

Hersteller:

Sensata
Herstellerteil #:

M50100TB1200
Datenblatt:

M50100TB1200 Datenblatt (PDF)
Product:

Diode Power Modules
Type:

SCR Module
Technology:

Si
Vf - Forward Voltage:

1.2 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an M50100TB1200

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

M50100TB1200 Allgemeine Beschreibung

The M50100TB1200 high voltage insulated gate bipolar transistor (IGBT) module, produced by Mitsubishi Electric, is a cutting-edge solution for high power applications. With a blocking voltage of 1200 volts and a continuous collector current rating of 100 amperes, this module is engineered to meet the demands of motor drives, wind power converters, and industrial equipment. Its compact design and high power density make it a top choice for space-constrained applications requiring robust power handling capabilities. The M50100TB1200 also boasts low loss and fast switching characteristics, ensuring efficient performance in high frequency operations. Its ability to handle high surge currents adds to its reliability and longevity in challenging environments. Additionally, the integrated temperature and overcurrent protection mechanisms further enhance its durability, making it an ideal solution for harsh operating conditions. The module's low on-state voltage drop also reduces power dissipation, improving overall efficiency and performance

Spezifikationen

Product Category	Discrete Semiconductor Modules	Product	Diode Power Modules
Type	SCR Module	Technology	Si
Vf - Forward Voltage	1.2 V	Vr - Reverse Voltage	1.2 kV
Mounting Style	Screw Mounts	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C	Series	M50 Diode
Configuration	Series Connection - 2 Diodes	Output Current	100 A
Product Type	Discrete Semiconductor Modules	Factory Pack Quantity	10
Subcategory	Discrete Semiconductor Modules	Unit Weight	3.739040 oz

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