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MT28EW512ABA1LPC-0SIT +BOM

2 megabytes, NOR architecture

MT28EW512ABA1LPC-0SIT Allgemeine Beschreibung

The MT28EW512ABA1LPC-0SIT NAND flash memory module from Micron Technology is a high-capacity, high-performance solution for a wide range of applications. With its 512 megabit capacity and low supply voltage requirement, it is suitable for use in consumer electronics, automotive systems, industrial equipment, and networking devices. Its fast read and program speeds, along with advanced power-saving features, make it an ideal choice for portable devices where battery life is a concern. The MT28EW512ABA1LPC-0SIT's high-quality NAND flash technology ensures reliable data storage and retrieval, even in harsh operating conditions

Spezifikationen

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Factory Lead Time 53 Weeks, 1 Day Access Time-Max 95 ns
Alternate Memory Width 8 JESD-30 Code R-PBGA-B64
JESD-609 Code e1 Length 13 mm
Memory Density 536870912 bit Memory IC Type FLASH
Memory Width 16 Number of Functions 1
Number of Terminals 64 Number of Words 33554432 words
Number of Words Code 32000000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 32MX16 Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260 Programming Voltage 3 V
Seated Height-Max 1.4 mm Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Finish TIN SILVER COPPER
Terminal Form BALL Terminal Pitch 1 mm
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) 30
Type NOR TYPE Width 11 mm
Programmabe Verified Memory Type Non-Volatile
Memory Format FLASH Memory Size 512Mbit
Memory Organization 64M x 8, 32M x 16 Memory Interface Parallel
Write Cycle Time - Word, Page 60ns Access Time 95 ns
Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount Base Product Number MT28EW512

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