Bezahlverfahren
MT29F2G16ABAEAWP:E +BOM
SLC NAND Flash 3.3V 2G-bit 128M x 16
48-TSOP I-
Hersteller:
Micron Technology Inc.
-
Herstellerteil #:
MT29F2G16ABAEAWP:E
-
Datenblatt:
-
Part Life Cycle Code:
Obsolete
-
Reach Compliance Code:
compliant
-
ECCN Code:
EAR99
-
HTS Code:
8542.32.00.51
-
EDA/CAD Modelle:
Fordern Sie kostenlose CAD-Modelle für an MT29F2G16ABAEAWP:E
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Verfügbarkeit: 5187 Stck
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MT29F2G16ABAEAWP:E Allgemeine Beschreibung
The MT29F2G16ABAEAWP:E NAND flash memory device from Micron Technology is a powerful storage solution with a capacity of 2GB (16Gb). Its 3.3V supply voltage ensures efficient performance, while its synchronous interface allows for seamless data transfer. With a page size of 4KB, this device is optimized for fast processing speeds, making it ideal for a wide range of applications, including smartphones, tablets, digital cameras, and other portable electronic devices
Hauptmerkmale
- Open NAND Flash Interface (ONFI) 2.2-compliant1
- Multiple-level cell (MLC) technology
- Organization
- – Page size x8: 8640 bytes (8192 + 448 bytes)
- – Block size: 256 pages (2048K + 112K bytes)
- – Plane size: 2 planes x 2048 blocks per plane
- – Device size: 64Gb: 4096 blocks;
- 128Gb: 8192 blocks;
- 256Gb: 16,384 blocks;
- 512Gb: 32,786 blocks
- Synchronous I/O performance
- – Up to synchronous timing mode 5
- – Clock rate: 10ns (DDR)
- – Read/write throughput per pin: 200 MT/s
- Asynchronous I/O performance
- – Up to asynchronous timing mode 5
- tRC/tWC: 20ns (MIN)
- Array performance
- – Read page: 50µs (MAX)
- – Program page: 1300µs (TYP)
- – Erase block: 3ms (TYP)
- Operating Voltage Range
- – VCC: 2.7–3.6V
- – VCCQ: 1.7–1.95V, 2.7–3.6V
- Command set: ONFI NAND Flash Protocol
- Advanced Command Set
- – Program cache
- – Read cache sequential
- – Read cache random
- – One-time programmable (OTP) mode
- – Multi-plane commands
- – Multi-LUN operations
- – Read unique ID
- – Copyback
- First block (block address 00h) is valid when shipped
- from factory. For minimum required ECC, see
- Error Management (page 109).
- RESET (FFh) required as first command after power
- Operation status byte provides software method for
- detecting
- – Operation completion
- – Pass/fail condition
- – Write-protect status
- Data strobe (DQS) signals provide a hardware method
- for synchronizing data DQ in the synchronous
- interface
- Copyback operations supported within the plane
- from which data is read
- Quality and reliability
- – Data retention: 10 years
- – Endurance: 5000 PROGRAM/ERASE cycles
- Operating temperature:
- – Commercial: 0°C to +70°C
- – Industrial (IT): –40ºC to +85ºC
- Package
- – 52-pad LGA
- – 48-pin TSOP
- – 100-ball BGA
Spezifikationen
Part Life Cycle Code | Obsolete | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8542.32.00.51 |
Access Time-Max | 25 ns | Command User Interface | YES |
Data Polling | NO | JESD-30 Code | R-PDSO-G48 |
Length | 18.4 mm | Memory Density | 2147483648 bit |
Memory IC Type | FLASH | Memory Width | 16 |
Number of Functions | 1 | Number of Sectors/Size | 2K |
Number of Terminals | 48 | Number of Words | 134217728 words |
Number of Words Code | 128000000 | Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 128MX16 | Page Size | 1K words |
Parallel/Serial | PARALLEL | Programming Voltage | 2.7 V |
Qualification Status | Not Qualified | Ready/Busy | YES |
Seated Height-Max | 1.2 mm | Sector Size | 64K |
Standby Current-Max | 0.0001 A | Supply Current-Max | 0.035 mA |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | COMMERCIAL |
Terminal Form | GULL WING | Terminal Pitch | 0.5 mm |
Terminal Position | DUAL | Toggle Bit | NO |
Type | SLC NAND TYPE | Width | 12 mm |
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In Stock: 5.187
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $3,298 | $3,30 |
200+ | $1,276 | $255,20 |
500+ | $1,231 | $615,50 |
1000+ | $1,210 | $1.210,00 |
Die unten angegebenen Preise dienen nur als Referenz.