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Siehe Technische Spezifikationen

MT29F64G08CBAAAWP-IT:A +BOM

Versatile NOR flash memory device offering both parallel and serial access modes, compatible with 2

Hersteller:

Micron Technology Inc.
Herstellerteil #:

MT29F64G08CBAAAWP-IT:A
Datenblatt:

MT29F64G08CBAAAWP-IT:A Datenblatt (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an MT29F64G08CBAAAWP-IT:A

MT29F64G08CBAAAWP-IT:A Allgemeine Beschreibung

Micron Technology's MT29F64G08CBAAAWP-IT:A NAND Flash memory chip is a powerhouse with its 64 gigabytes of storage capacity. Featuring NAND Flash architecture, this chip is perfect for use in smartphones, tablets, digital cameras, and other consumer electronics. Its industrial temperature range of -40°C to 85°C ensures stable performance in demanding conditions, making it a reliable choice for a multitude of applications. Utilizing multi-level cell or triple-level cell technology, this chip optimizes storage density while keeping costs in check. With advanced features like error-correction techniques and wear-leveling algorithms, users can have confidence in the durability and longevity of this memory chip

Hauptmerkmale

Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
RESET (FFh) required as first command after power
Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

Spezifikationen

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	64Gbit	Memory Organization	8G x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	-	Access Time	-
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

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