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MT53E1G32D2FW-046 AUT:B +BOM

Pre-ordered product

Hersteller:

Micron Technology Inc.
Herstellerteil #:

MT53E1G32D2FW-046 AUT:B
Datenblatt:

MT53E1G32D2FW-046 AUT:B Datenblatt (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

DRAM
Technology:

SDRAM - Mobile LPDDR4X
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an MT53E1G32D2FW-046 AUT:B

MT53E1G32D2FW-046 AUT:B Allgemeine Beschreibung

Designed for high-performance computing applications, the MT53E1G32D2FW-046 AUT:B DDR4 SDRAM module from Micron Technology offers exceptional memory performance and reliability. With its 8GB capacity and 2400 Mbps speed, this module is suitable for use in desktop computers, laptops, and servers that require fast and efficient memory solutions. The 260-pin form factor ensures easy installation, and the low 1.2V operating voltage helps to minimize power consumption while maximizing the lifespan of the memory module. The MT53E1G32D2FW-046 AUT:B module also features a x8 organization and dual-rank architecture, providing increased memory capacity and improved data processing capabilities. With support for Auto-Refresh and Self-Refresh modes, this module is a versatile and efficient choice for a wide range of computing tasks

Hauptmerkmale

Operating voltage range is 1.10V (VDD2) / 0.60V or 1.10V (VDDQ)
1Gig x 32 configuration, LPDDR4, 2die addressing, clock-stop capability
Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (Ø0.40 SMD)
Cycle time is 046 = 468ps, ᵗCK RL = 36/40
Operating temperature range is -40°C to +125°C, automotive certified, b design
Clock rate is 2133MHz, data rate is 4266Mb/s, 16n prefetch DDR architecture
Frequency range is 2133-10 MHz (data rate range per pin: 4266-20Mb/s)
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
Partial-array self refresh (PASR), selectable output drive strength (DS)

Spezifikationen

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	DRAM	Technology	SDRAM - Mobile LPDDR4X
Memory Size	32Gbit	Memory Organization	1G x 32
Memory Interface	Parallel	Clock Frequency	2.133 GHz
Write Cycle Time - Word, Page	18ns	Access Time	3.5 ns
Voltage - Supply	1.06V ~ 1.17V	Operating Temperature	-40°C ~ 125°C (TC)
Mounting Type	Surface Mount

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