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N25Q512A13GSF40F +BOM

6-pin plastic dual small outline, 0.300 inch dimensions, RoHS conformity, SOP2-16 package

Hersteller:

HIKVISION
Herstellerteil #:

N25Q512A13GSF40F
Datenblatt:

N25Q512A13GSF40F Datenblatt (PDF)
Series:

N25Q
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Fordern Sie kostenlose CAD-Modelle für an N25Q512A13GSF40F

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Tel: +852 95804164

N25Q512A13GSF40F Allgemeine Beschreibung

The N25Q512A13GSF40F, manufactured by Micron Technology, is a high-quality serial flash memory that combines high-performance capabilities with low-power consumption. This flash memory device boasts a capacity of 512 Megabits (64 Megabytes), operates on a 1.8V power supply, and offers fast read and program speeds with a maximum clock frequency of 133 MHz in SPI mode. Its wide operating temperature range of -40°C to 85°C makes it suitable for use in a variety of industrial and automotive applications. Additionally, the N25Q512A13GSF40F features a flexible architecture with uniform 4KB sectors that can be individually erased, providing easy data storage and updates management. The device also supports a range of security features, including hardware and software protection mechanisms to safeguard sensitive data, and has a low standby current consumption to extend battery life in portable devices

Hauptmerkmale

Stacked device (two 256Mb die) SPI-compatible serial bus interface Double transfer rate (DTR) mode 2.7–3.6V single supply voltage 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode 54 MHz (MAX) clock frequency supported for all protocols in DTR mode Dual/quad I/O instruction provides increased throughput up to 54 MB/s Supported protocols– Extended SPI, dual I/O, and quad I/O– DTR mode supported on all Execute-in-place (XIP) mode for all three protocols– Configurable via volatile or nonvolatile registers– Enables memory to work in XIP mode directly after power-on PROGRAM/ERASE SUSPEND operations Available protocols– Available READ operations– Quad or dual output fast read– Quad or dual I/O fast read Flexible to fit application– Configurable number of dummy cycles– Output buffer configurable Software reset Additional reset pin for selected part numbers 1 3-byte and 4-byte addressability mode supported 64-byte, user-lockable, one-time programmable (OTP) dedicated area Erase capability– Subsector erase 4KB uniform granularity blocks– Sector erase 64KB uniform granularity blocks– Single die erase Write protection– Software write protection applicable to every 64KB sector via volatile lock bit– Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2,BP3, and TB)– Additional smart protections, available upon request Electronic signature– JEDEC-standard 2-byte signature (BA20h)– Unique ID code (UID): 17 read-only bytes, including: Two additional extended device ID bytes to identify device factory options; and customized factory data (14 bytes) Minimum 100,000 ERASE cycles per sector More than 20 years data retention Packages – JEDEC-standard, all RoHS-compliant– V-PDFN-8/8mm x 6mm (also known as SON, DFPN, MLP, MLF)– SOP2-16/300mils (also known as SO16W, SO16-Wide, SOIC-16)– T-PBGA-24b05/6mm x 8mm (also known as TBGA24)

Spezifikationen

Product Category	NOR Flash	Series	N25Q
Product Type	NOR Flash	Subcategory	Memory & Data Storage

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