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NAND512W3A2SZA6E +BOM

64M x 8bit 12us 63-Pin VFBGA Tray

Hersteller:

Micron Technology Inc.
Herstellerteil #:

NAND512W3A2SZA6E
Datenblatt:

NAND512W3A2SZA6E Datenblatt (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NAND512W3A2SZA6E

NAND512W3A2SZA6E Allgemeine Beschreibung

The NAND512W3A2SZA6E is a cutting-edge NAND flash memory chip engineered to provide high-performance storage capabilities. Boasting a generous capacity of 512 gigabits, or 64 gigabytes, this chip is ideal for accommodating the data-intensive needs of modern electronic devices. Its 3-bit per cell architecture enables impressive storage density, although slightly compromising on reliability compared to alternative designs. Operating at a voltage of 3.3 volts, the NAND512W3A2SZA6E is optimized for use in a diverse range of gadgets including SSDs, smartphones, tablets, and cameras. With a lightning-fast data transfer rate of up to 400 MB/s for both reading and writing tasks, this chip ensures seamless and efficient access to data when it matters most. Furthermore, its advanced error correction mechanisms guarantee the preservation of data integrity and reliability even during prolonged usage, making it a dependable choice for demanding applications

Hauptmerkmale

High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
Supply voltage: 1.8 V, 3.0 V
Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
Page Read/Program
– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 µs (typ)
Copy Back Program mode
Fast Block Erase: 2 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial Number option
Hardware Data Protection
– Program/Erase locked during Power transitions
Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
ECOPACK® packages
Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models

Spezifikationen

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	512Mbit	Memory Organization	64M x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	50ns	Access Time	50 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

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