Bezahlverfahren
NTE858M +BOM
Mini-DIP Dual Op Amp with Low Noise Characteristics and ±18V Power Rails
8-DIP(0.300",7.62mm)-
Hersteller:
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Herstellerteil #:
NTE858M
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Datenblatt:
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Amplifier Type:
J-FET
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Number Of Circuits:
2
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Slew Rate:
13V/µs
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Gain Bandwidth Product:
4 MHz
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EDA/CAD Modelle:
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Verfügbarkeit: 7083 Stck
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NTE858M Allgemeine Beschreibung
The NTE858M is a high-performance silicon NPN transistor designed for high current switching applications. With a collector current of 10A and a collector-emitter voltage of 80V, it is well-equipped to handle demanding tasks. Housed in a TO-3P package, it offers excellent power dissipation and thermal performance. The built-in damper diode provides protection against back EMF during switching operations. This transistor is commonly used in power switching circuits, motor control applications, and high current amplification in various industrial and automotive applications. Its durable construction and use of high-quality materials ensure reliable performance and longevity in demanding environments
Spezifikationen
Amplifier Type | J-FET | Number of Circuits | 2 |
Slew Rate | 13V/µs | Gain Bandwidth Product | 4 MHz |
Current - Input Bias | 80 pA | Voltage - Input Offset | 2 mV |
Current - Supply | 1.4mA (x2 Channels) | Voltage - Supply Span (Min) | 36 V |
Voltage - Supply Span (Max) | 36 V | Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | Through Hole |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
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In Stock: 7.083
Minimum Order: 1
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1+ | - | - |
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