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Siehe Technische Spezifikationen

S29GL512S11TFIV10 +BOM

NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns 56-Pin TSOP Tray

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

S29GL512S11TFIV10
Datenblatt:

S29GL512S11TFIV10 Datenblatt (PDF)
Series:

GL-S
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an S29GL512S11TFIV10

S29GL512S11TFIV10 Allgemeine Beschreibung

The S29GL512S11TFIV10 is a 512 Megabit (Mb) (64 Megabyte) NAND flash memory device. It is designed to store data reliably and securely, making it suitable for a wide range of applications that require non-volatile storage.

Infineon Technologies Corporation Inventar

Hauptmerkmale

High Capacity: With a capacity of 512 Mb, the device can store a significant amount of data, such as program code, operating systems, and other digital content.
NAND Flash Technology: It uses NAND flash memory technology, which offers high density, cost-effectiveness, and fast read and write operations.
3V Supply Voltage: The device operates at a supply voltage of 3.3V, which is common in many digital systems.
Page Program: It supports page programming, which allows data to be programmed in small page increments for efficient memory utilization.
Block Erase: The device supports block erase operations, enabling a large section of memory to be erased simultaneously for data updates.
Hardware Data Protection: It includes hardware data protection features, such as write protection, to prevent accidental data corruption.
Extended Temperature Range: The S29GL512S11TFIV10 is designed to operate over an extended temperature range, making it suitable for use in industrial and automotive applications.

Infineon Technologies Corporation Originalbestand

Anwendung

Embedded Systems
Communication Devices
Automotive Systems
Industrial Equipment
Consumer Electronics
Networking Devices

Spezifikationen

Category	Integrated Circuits (ICs)MemoryMemory	Series	GL-S
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR	Memory Size	512Mbit
Memory Organization	32M x 16	Memory Interface	Parallel
Write Cycle Time - Word, Page	60ns	Access Time	110 ns
Voltage - Supply	1.65V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	S29GL512
RHoS	yes	PBFree	yes
HalogenFree	yes

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