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SI8233BD-D-IS +BOM

digital isolator

SI8233BD-D-IS Allgemeine Beschreibung

In conclusion, the SI8233BD-D-IS power FET driver offers a winning combination of performance, versatility, and reliability. Its dual-channel setup, high-speed capabilities, and wide input voltage range make it a standout choice for engineers seeking a top-tier solution for their power switching needs. With features like undervoltage lockout and a compact form factor, this driver is well-suited for a range of industrial applications where efficiency and speed are paramount

Hauptmerkmale

  • The SI8233BD-D-IS gate driver offers rapid desaturation detection
  • Built-in under-voltage lockout protection prevents accidental operation
  • Suitable for use in demanding applications, it ensures reliable performance

Anwendung

  • Industrial power supplies
  • Electric vehicle applications
  • Motor drive solutions

Spezifikationen

Product Category Galvanically Isolated Gate Drivers Series Si823x
Type High-Side, Low-Side Mounting Style SMD/SMT
Configuration High-Side, Low-Side Number of Drivers 2 Driver
Number of Outputs 2 Output Output Current 4 A
Supply Voltage - Min 6.5 V Supply Voltage - Max 24 V
Isolation Voltage 5 kVrms Rise Time 12 ns
Fall Time 12 ns Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C Technology Si
Qualification AEC-Q100 Development Kit SI8233-KIT
Features Industrial, High Electromagnetic Immunity Input Voltage, Max 5.5 V
Input Voltage, Min 4.5 V Logic Type TTL
Maximum Turn-Off Delay Time 60 ns Maximum Turn-On Delay Time 60 ns
Moisture Sensitive Yes Number of Channels 2 Channel
Operating Supply Current 3.5 mA Output Voltage 8 V
Pd - Power Dissipation 1.2 W Product Isolated Gate Drivers
Product Type Galvanically Isolated Gate Drivers Propagation Delay - Max 45 ns
Rds On - Drain-Source Resistance 2.7 Ohms Shutdown Shutdown
Factory Pack Quantity 46 Subcategory PMIC - Power Management ICs
Unit Weight 0.017932 oz

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