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Siehe Technische Spezifikationen

SI9910DJ +BOM

Driver 1A with 1 output, high side half bridge, non-inverting, 8-pin PDIP

Hersteller:

Vishay
Herstellerteil #:

SI9910DJ
Datenblatt:

SI9910DJ Datenblatt (PDF)
Product:

MOSFET Gate Drivers
Type:

High-Side
Mounting Style:

Through Hole
Number Of Drivers:

1 Driver
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an SI9910DJ

SI9910DJ Allgemeine Beschreibung

The SI9910DJ is a versatile MOSFET driver that combines high performance with a compact design. Featuring a peak output current of 1A and a supply voltage range of 10.8V to 16.5V, this driver is capable of driving a wide range of MOSFETs. The non-inverting module configuration and 8-pin DIP case style make the SI9910DJ easy to integrate into existing circuit designs. With an input delay of 120ns and an output delay of 135ns, this driver offers fast and responsive control over MOSFET behavior. Operating in temperatures ranging from -40°C to +85°C, the SI9910DJ is suitable for use in a variety of environments. The output voltage of 10.7V and output current of 1A make the SI9910DJ well-suited for power electronics applications

Hauptmerkmale

The SI9910DJ is a 50MHz SMBus-compatible IR sync buck-boost controller with programmable overcurrent protection.
This device supports peak currents up to 15A and has an input voltage range of 4.5V to 65V.

Anwendung

Highly versatile driver
For various power applications

Spezifikationen

Product Category	Gate Drivers	Product	MOSFET Gate Drivers
Type	High-Side	Mounting Style	Through Hole
Number of Drivers	1 Driver	Number of Outputs	1 Output
Supply Voltage - Min	10.8 V	Supply Voltage - Max	16.5 V
Rise Time	50 ns	Fall Time	35 ns
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Operating Supply Current	100 uA	Operating Supply Voltage	10.8 V to 16.5 V
Pd - Power Dissipation	700 mW	Product Type	Gate Drivers
Factory Pack Quantity	50	Subcategory	PMIC - Power Management ICs
Technology	Si	Unit Weight	0.080001 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..