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Siehe Technische Spezifikationen

TC58NVG1S3HTAI0 +BOM

NAND Flash 3.3V 2Gb 24nm Industrial Temperature Single-Level Cell NAND (Electrically Erasable Programmable Read-Only Memory)

Hersteller:

Kioxia
Herstellerteil #:

TC58NVG1S3HTAI0
Datenblatt:

TC58NVG1S3HTAI0 Datenblatt (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Mounting Style:

SMD/SMT
Memory Size:

2 Gbit
Interface Type:

Parallel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an TC58NVG1S3HTAI0

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

TC58NVG1S3HTAI0 Allgemeine Beschreibung

Toshiba's TC58NVG1S3HTAI0 NAND flash memory device stands out due to its advanced 64-layer 3D flash memory technology, setting it apart from other products on the market. This technology allows for higher storage capacities and enhanced reliability, ensuring that your data is safe and secure. Additionally, the device supports both SLC and TLC NAND flash memory types, offering versatility for different usage scenarios

Hauptmerkmale

Toshiba TC58NVG1S3HTAI0 is a 64Gbit NAND flash memory chip

It uses a 3.3V power supply and has a multiplane architecture

The chip offers a high-speed data transfer rate of up to 83MB/s

It is designed for use in a wide range of consumer electronics, such as smartphones, tablets, and digital cameras

The TC58NVG1S3HTAI0 supports features like SLC cache and advanced error correction

Anwendung

The TC58NVG1S3HTAI0 is versatile
Reliable storage solution
Fast data transfer speeds

Spezifikationen

Product Category	NAND Flash	Shipping Restrictions	This product may require additional documentation to export from the United States.
Mounting Style	SMD/SMT	Memory Size	2 Gbit
Interface Type	Parallel	Organization	256 M x 8
Timing Type	Synchronous	Data Bus Width	8 bit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Supply Current - Max	30 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Active Read Current - Max	30 mA
Memory Type	NAND	Moisture Sensitive	Yes
Product Type	NAND Flash	Factory Pack Quantity	96
Subcategory	Memory & Data Storage	Unit Weight	0.018695 oz

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Zahlung

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..