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Siehe Technische Spezifikationen

UCC21320QDWKRQ1 +BOM

Isolate and amplify power with this dual-channel gate drive

Hersteller:

TI
Herstellerteil #:

UCC21320QDWKRQ1
Datenblatt:

UCC21320QDWKRQ1 Datenblatt (PDF)
Number Of Channels:

2
Isolation Rating:

Functional
Withstand Isolation Voltage (VISO) (Vrms):

3750
Working Isolation Voltage (VIOWM) (Vrms):

2121
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an UCC21320QDWKRQ1

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

UCC21320QDWKRQ1 Allgemeine Beschreibung

Meet the UCC21320QDWKRQ1, a galvanically isolated gate driver tailored for automotive use. This advanced driver boasts an impressive isolation voltage of 3.75kVrms, along with dual channels capable of handling currents up to 4A/6A. Its programmable deadtime feature offers precise control over power transistor switching, allowing for customized performance in various scenarios. Packaged in a compact 14-SOIC form factor, the UCC21320QDWKRQ1 is built to withstand harsh automotive environments, with an operating temperature range of -40 to 125 degrees Celsius

Hauptmerkmale

4-A peak source, 6-A peak sink output
3-V to 18-V input VCCI range to interface with both digital and analog controllers
Up to 25-V VDD output drive supply
Switching parameters:
- 19-ns typical propagation delay
- 10-ns minimum pulse width
- 5-ns maximum delay matching
- 6-ns maximum pulse-width distortion
Common-mode transient immunity (CMTI) greater than 100 V/ns
Universal: dual low-side, dual high-side or half-bridge driver
Programmable overlap and dead time
Wide Body SOIC-14 (DWK) Package
- 3.3mm spacing between driver channels
Operating temperature range –40 to +125°C
Surge immunity up to 12.8 kV
Isolation barrier life >40 years
TTL and CMOS compatible inputs
Rejects input pulses and noise transients shorter than 5 ns
Fast disable for power sequencing
Qualified for automotive applications
AEC-Q100 qualified with the following results
- Device temperature grade 1
- Device HBM ESD classification level H2
- Device CDM ESD classification level C6

Spezifikationen

Number of channels	2	Isolation rating	Functional
Withstand isolation voltage (VISO) (Vrms)	3750	Working isolation voltage (VIOWM) (Vrms)	2121
Transient isolation voltage (VIOTM) (VPK)	5303	Power switch	IGBT, MOSFET, SiCFET
Peak output current (A)	6	Features	Disable, Programmable dead time
Output VCC/VDD (max) (V)	25	Output VCC/VDD (min) (V)	9.2
Input VCC (min) (V)	3	Input VCC (max) (V)	18
Propagation delay time (µs)	0.019	Input threshold	CMOS, TTL
Operating temperature range (°C)	-40 to 125	Rating	Automotive
Bus voltage (max) (V)	2121	Rise time (ns)	6
Fall time (ns)	19	Undervoltage lockout (typ) (V)	8

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..