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W25M02GVZEIG +BOM

WSON-8 packaged Flash memory with 1GX2 capacity

Hersteller:

Winbond Electronics
Herstellerteil #:

W25M02GVZEIG
Datenblatt:

W25M02GVZEIG Datenblatt (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an W25M02GVZEIG

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W25M02GVZEIG Allgemeine Beschreibung

The W25M02GVZEIG from Winbond is a cutting-edge 2-gigabyte flash memory chip that is revolutionizing the world of electronic devices. With its high-speed data transfer rates and low power consumption, this chip is the perfect choice for portable gadgets such as smartphones, tablets, and digital cameras. Its serial interface makes it suitable for embedded applications, providing seamless communication with the host system. The support for the industry-standard SPI protocol ensures easy integration into existing systems, making it a versatile option for a wide range of electronic devices. Additionally, the advanced security features including hardware-based data protection and encryption guarantee the safety of stored information, a critical factor in today's digital age

Hauptmerkmale

New Family of SpiFlash Memories
– W25M02GV: 2x1G-bit / 2x128M-byte
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Compatible SPI serial flash commands
Highest Performance Serial NAND Flash
– 104MHz Standard/Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Fast Program/Erase performance
– More than 100,000 erase/program cycles
– More than 10-year data retention
Efficient “Continuous Read Mode”(1)
– Alternative method to the Buffer Read Mode
– No need to issue “Page Data Read” between
Read commands
– Allows direct read access to the entire array
Flexible “Concurrent Operations”
– Independent single die access
– Allows “Read while Program/Erase”
– Allows “Multi Die Program/Erase”
– Improves Program/Erase throughput
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 25mA active, 20µA standby current
– -40°C to +85°C operating range
Flexible Architecture with 128KB blocks
– Uniform 128K-Byte Block Erase
– Flexible page data load methods
Advanced Features
– On chip 1-Bit ECC for memory array
– ECC status bits indicate ECC results
– bad block management and LUT(2) access
– Software and Hardware Write-Protect
– Power Supply Lock-Down and OTP protection
– 2KB Unique ID and 2KB parameter pages
– Ten 2KB OTP pages(3)
Space Efficient Packaging
– 8-pad WSON 8x6-mm
– 24-ball TFBGA 8x6-mm
– Contact Winbond for other package options

Spezifikationen

Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Clock Frequency-Max (fCLK)	104 MHz	JESD-30 Code	R-PDSO-N8
Length	8 mm	Memory Density	2147483648 bit
Memory IC Type	FLASH	Memory Width	2
Number of Functions	1	Number of Terminals	8
Number of Words	1073741824 words	Number of Words Code	1000000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	1GX2
Parallel/Serial	SERIAL	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Programming Voltage	3 V	Seated Height-Max	0.8 mm
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Form	NO LEAD	Terminal Pitch	1.27 mm
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Type	SLC NAND TYPE	Width	6 mm

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