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Siehe Technische Spezifikationen

W25M512JVFIQ +BOM

12Mbit Serial Flash Memory featuring Multi-Chip Package operation, uniform 4KB sectors and Dual/Quad Serial Peripheral Interface

Hersteller:

WINBOND ELECTRONICS CORP
Herstellerteil #:

W25M512JVFIQ
Datenblatt:

W25M512JVFIQ Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an W25M512JVFIQ

W25M512JVFIQ Allgemeine Beschreibung

Embracing the ethos of security, the W25M512JVFIQ emerges as a bastion of trust, offering advanced features such as a unique device ID for authentication and secure boot capabilities. Tailored for a myriad of applications spanning automotive, industrial, networking, and consumer electronics domains, this chip transcends mere functionality to become an indispensable cornerstone of modern technology

Hauptmerkmale

New Family of SpiFlash Memories
– W25M02GV: 2x1G-bit / 2x128M-byte
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Compatible SPI serial flash commands
Highest Performance Serial NAND Flash
– 104MHz Standard/Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Fast Program/Erase performance
– More than 100,000 erase/program cycles
– More than 10-year data retention
Efficient “Continuous Read Mode”(1)
– Alternative method to the Buffer Read Mode
– No need to issue “Page Data Read” between
Read commands
– Allows direct read access to the entire array
Flexible “Concurrent Operations”
– Independent single die access
– Allows “Read while Program/Erase”
– Allows “Multi Die Program/Erase”
– Improves Program/Erase throughput
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 25mA active, 20µA standby current
– -40°C to +85°C operating range
Flexible Architecture with 128KB blocks
– Uniform 128K-Byte Block Erase
– Flexible page data load methods
Advanced Features
– On chip 1-Bit ECC for memory array
– ECC status bits indicate ECC results
– bad block management and LUT(2) access
– Software and Hardware Write-Protect
– Power Supply Lock-Down and OTP protection
– 2KB Unique ID and 2KB parameter pages
– Ten 2KB OTP pages(3)
Space Efficient Packaging
– 8-pad WSON 8x6-mm
– 24-ball TFBGA 8x6-mm
– Contact Winbond for other package options

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	Alternate Memory Width	1
Clock Frequency-Max (fCLK)	104 MHz	JESD-30 Code	R-PDSO-G16
Length	10.31 mm	Memory Density	536870912 bit
Memory IC Type	FLASH	Memory Width	8
Number of Functions	1	Number of Terminals	16
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	64MX8
Parallel/Serial	SERIAL	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Programming Voltage	3 V	Seated Height-Max	2.64 mm
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	GULL WING
Terminal Pitch	1.27 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Type	NOR TYPE
Width	7.49 mm

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..