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Siehe Technische Spezifikationen

W25Q64CVSSIG +BOM

8 megabit storage capacity

Hersteller:

Winbond Electronics
Herstellerteil #:

W25Q64CVSSIG
Datenblatt:

W25Q64CVSSIG Datenblatt (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

8
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an W25Q64CVSSIG

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W25Q64CVSSIG Allgemeine Beschreibung

For designers and engineers seeking a reliable and high-performance flash memory chip, the W25Q64CVSSIG from Winbond ticks all the boxes. Its wide voltage range and high-speed SPI interface make it suitable for a wide range of applications in consumer electronics, networking, industrial, and automotive fields. The chip's efficient erasing capabilities, low power consumption in deep power-down mode, and high endurance of 100,000 program/erase cycles per sector ensure its reliable and durable performance over the product's lifetime. Whether it's for fast read and write operations or efficient erasing and programming, the W25Q64CVSSIG offers the speed, reliability, and endurance that today's electronic devices demand

Hauptmerkmale

Family of SpiFlash Memories
– W25Q64CV: 64M-bit / 8M-byte (8,388,608)
– 256-byte per programmable page
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
Highest Performance Serial Flash
– 80MHz Dual/Quad SPI clocks
– 160/320MHz equivalent Dual/Quad SPI
– 40MB/S continuous data transfer rate
– Up to 8X that of ordinary Serial Flash
– More than 100,000 erase/program cycles(1)
– More than 20-year data retention
Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read with 8/16/32/64-Byte Wrap
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Efficient “Continuous Read Mode”
– Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down (typ.)
– -40° C to +85°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4/32/64K-bytes)
– Program one to 256 bytes
– Erase/Program Suspend & Resume
Advanced Security Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Power Supply Lock-Down and OTP protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
Space Efficient Packaging(1)
– 8-pin SOIC/VSOP 208-mil
– 8-pad WSON 6x5-mm/8x6-mm
– 16-pin SOIC 300-mil
– 8-pin PDIP 300-mil
– 24-ball TFBGA 8x6-mm (6x4/5x5 ball array)
– Contact Winbond for KGD and other options

Spezifikationen

Part Life Cycle Code	Obsolete	Pin Count	8
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8542.32.00.51	Access Time-Max	8.5 ns
Clock Frequency-Max (fCLK)	80 MHz	Data Retention Time-Min	20
Endurance	100000 Write/Erase Cycles	JESD-30 Code	S-PDSO-G8
Length	5.28 mm	Memory Density	67108864 bit
Memory IC Type	FLASH	Memory Width	8
Number of Functions	1	Number of Terminals	8
Number of Words	8388608 words	Number of Words Code	8000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	8MX8
Parallel/Serial	SERIAL	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Programming Voltage	2.7 V	Qualification Status	Not Qualified
Seated Height-Max	2.16 mm	Serial Bus Type	SPI
Standby Current-Max	0.000005 A	Supply Current-Max	0.025 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Form	GULL WING	Terminal Pitch	1.27 mm
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Type	NOR TYPE	Width	5.28 mm
Write Protection	HARDWARE/SOFTWARE

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