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Siehe Technische Spezifikationen

ZXMS6006DT8TA +BOM

The ZXMS6006DT8TA is a versatile and reliable choice for applications requiring efficient power management and switching capabilities

Hersteller:

Diodes Incorporated
Herstellerteil #:

ZXMS6006DT8TA
Datenblatt:

ZXMS6006DT8TA Datenblatt (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

ZXMS6006DT8TA Allgemeine Beschreibung

The ZXMS6006DT8TA is an exemplary N-channel enhancement mode transistor, purpose-built for high-side load switching applications in demanding automotive and industrial environments where top-tier reliability and performance are imperative. Encapsulated in a compact SOT23 package, this transistor is ideal for designs with space limitations, while its maximum drain-source voltage of 60V and continuous drain current of 4A ensure suitability for a diverse range of load switching applications. Furthermore, the ZXMS6006DT8TA features a low on-resistance of 60mOhm, guaranteeing minimal power loss and high efficiency during operation. Its fast switching speed, with a turn-on time of 10ns and a turn-off time of 16ns, makes it ideal for applications requiring quick response times. Additionally, this transistor incorporates built-in thermal protection and reverse polarity protection, further enhancing its reliability and safeguarding against potential damage from overheating or incorrect wiring

Hauptmerkmale

Advanced power management solution
Wide range voltage translation
Rugged and reliable design
Smart power supply controller

Anwendung

Glow with LED

Spezifikationen

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	2.8 A
Rds On - Drain-Source Resistance	75 mOhms, 75 mOhms	Vgs - Gate-Source Voltage	- 5 V, + 5 V
Vgs th - Gate-Source Threshold Voltage	700 mV	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C	Pd - Power Dissipation	2.13 W
Channel Mode	Enhancement	Tradename	IntelliFET
Series	ZXMS600	Configuration	Dual
Fall Time	15 us, 15 us	Product Type	MOSFET
Rise Time	18 us, 18 us	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	34 us, 34 us	Typical Turn-On Delay Time	8.6 us, 8.6 us
Unit Weight	4.127054 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..