IGBT Chip(22)

31A IGBT TO247 IRG4PC30FD

The IRGPS60B120KD is an N-Channel Insulated Gate Bipolar Transistor with a maximum collector current of 105A and a breakdown voltage of 1200V

IRG4PC50KD: A high-power N-channel IGBT capable of handling currents up to 52A and voltages up to 600V, housed in TO-247AC and TO-3P packages

Suitable for high power applications

High Current Handling Capability of 31A

IRGP30B60KD-E: N-Type Insulated Gate Bipolar Transistor with a TO-247AD package

N-Channel TO-247AD Transistor with 40A I(C) and 1200V V(BR)CES

51A IC Insulated Gate Bipolar Transistor with 900V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN

IRG4PH40U: A robust transistor component designed for power electronics applications, capable of handling high voltages and currents efficiently

IRG4RC10S 14A DPAK IGBT

In this TO-247AC tube, you'll find a high-power N-channel IGBT transistor chip, rated for 1200 volts, 41 amps, and 160 watts

IRG4PH40KD is sold in a tube packaging for convenience and protection

N-channel 600V 49A 160W

1200V N-CH Trans IGBT Chip 60A 300W 3-Pin(3+Tab) TO-247AD Tube

Trans IGBT Chip N-CH 2500V 60A 250W 3-Pin(2+Tab) TO-268 T/R

Trans IGBT Chip N-CH 1500V 40A 200W 3-Pin(3+Tab) TO-3PL

Infineon IGBT-CHIPS

Trans IGBT Chip N-CH 4.5KV 340A 3-Pin

IGBT Die in Wafer Form