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APT33GF120BRG +BOM

1200V IGBT APT33GF120BRG Non-Punch-Thru

APT33GF120BRG Allgemeine Beschreibung

The APT33GF120BRG silicon carbide Schottky diode module is revolutionizing high-performance applications with its advanced design and superior capabilities. Developed by Microsemi Corporation, this module features a dual diode configuration with a common cathode and boasts a remarkable current rating of 33A. Its maximum forward current of 33A and reverse voltage rating of 1200V make it a standout choice for high-power applications, while its low forward voltage drop and fast switching speed guarantee high efficiency and performance in a variety of power electronics applications. The module's compact and rugged package ensures easy installation and reliable operation, even in challenging environments. With internal temperature monitoring and protection features, the APT33GF120BRG module delivers safe and reliable operation under diverse operating conditions

Microchip Inventar

Hauptmerkmale

  • Efficient power delivery
  • High performance switching
  • Safe and reliable operation
Microchip Originalbestand

Anwendung

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Spezifikationen

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.7 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 52 A
Pd - Power Dissipation 297 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Continuous Collector Current 52 A
Continuous Collector Current Ic Max 52 A Gate-Emitter Leakage Current 100 nA
Height 5.31 mm Length 21.46 mm
Operating Temperature Range - 55 C to + 150 C Product Type IGBT Transistors
Factory Pack Quantity 1 Subcategory IGBTs
Width 16.26 mm Unit Weight 1.340411 oz

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