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EN29LV160CB-70TIP +BOM

16Mbit Parallel IC

Hersteller:

ESMT
Herstellerteil #:

EN29LV160CB-70TIP
Datenblatt:

EN29LV160CB-70TIP Datenblatt (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an EN29LV160CB-70TIP

EN29LV160CB-70TIP Allgemeine Beschreibung

The EN29LV160CB-70TIP, a cutting-edge 16-megabit flash memory marvel from Eon Silicon Solution Inc., stands out with its impressive specifications. Operating at a swift 70 nanoseconds speed and requiring a voltage range of 3.0 to 3.6 volts, this memory component boasts 66 sectors, each filled with 16,384 bytes of storage capacity. Its symmetrical block architecture, coupled with sector and chip erase functionalities, sets it apart from the competition. Moreover, the automatic program and erase algorithm integrated into this chip streamline the programming process, making it a breeze for users to operate

Hauptmerkmale

3.0V, single power supply operation
- Minimizes system level power requirements
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5 MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 μA standby current
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and thirty-one 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword sectors (word mode)
Sector protection :
- Hardware locking of sectors to prevent program or erase operations within individual sectors
- Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
Secured Silicon Sector
- Provides a 128-words area for code or data that can be permanently protected.
- Once this sector is protected, it is prohibited to program or erase within the sector again.
High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 100ms typical
- Chip erase time: 4s typical
JEDEC Standard program and erase commands
JEDEC standard DATA# polling and toggle bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
Triple-metal double-poly triple-well CMOS Flash Technology
Low Vcc write inhibit <2.5V
minimum 100K program/erase endurance cycle
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm TFBGA
Industrial Temperature Range

Spezifikationen

Series	-	Programmabe	Not Verified
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR	Memory Size	16Mbit
Memory Organization	2M x 8, 1M x 16	Memory Interface	Parallel
Access Time	70 ns	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C	Mounting Type	Surface Mount

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