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Siehe Technische Spezifikationen

EN29LV800CT-70TIP +BOM

With a speed of 5MHz, this parallel 16bit memory has a low latency of 70ns

Hersteller:

EON
Herstellerteil #:

EN29LV800CT-70TIP
Datenblatt:

EN29LV800CT-70TIP Datenblatt (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an EN29LV800CT-70TIP

EN29LV800CT-70TIP Allgemeine Beschreibung

Furthermore, with a 12V programming voltage, the EN29LV800CT-70TIP chip enables fast and efficient write operations, reducing overall system latency. This makes it well-suited for applications where high-speed data storage and retrieval are crucial. The advanced features, such as simultaneous read/program operations, enhance the overall efficiency of the chip, making it a reliable choice for demanding embedded systems and other data-intensive applications

Hauptmerkmale

Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5 MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- 1 μA typical standby current (standard access time to active mode)
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode)
High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 100ms typical
Sector protection:
- Hardware locking of sectors to prevent program or erase operations within individual sectors
- Additionally, temporary Sector Unprotect allows code changes in previously locked sectors.
JEDEC Standard Embedded Erase and Program Algorithms
JEDEC standard DATA# polling and toggle bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode
Low Vcc write inhibit <2.5V
Minimum 100K endurance cycle
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm TFBGA
Industrial and Automotive temperature Range

Spezifikationen

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	8Mbit	Memory Organization	1M x 8, 512K x 16
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	-	Access Time	70 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C
Mounting Type	Surface Mount

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