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IDW20G65C5 +BOM

The IDW20G65C5 is a high-performance Schottky Barrier Diode with a maximum current rating of 20A and a low forward voltage drop of 1.5V at 10A

IDW20G65C5 Allgemeine Beschreibung

Diode 650 V 20A Through Hole PG-TO247-3-1

INFINEON Inventar

Hauptmerkmale

  • Vbr at 650V
  • Improved Figure of Merit (Qc x Vf)
  • No reverse recovery charge
  • Soft switching reverse
  • recovery waveform
  • Temperature independent
  • switching behavior
  • High operating temperature
  • (Tj max 175°C)
  • Improved surge capability
  • Pb-free lead plating
  • 10 years manufacturing of SiC diodes
  • Benefts
  • Higher safety margin against
  • Overvoltage; best match with
  • CoolMOS™ 650V products
  • Improved efciency over all
  • load conditions
  • Increased efciency compared to
  • Silicon Diode alternatives
  • Reduced EMI compared to snappier
  • Silicon diode reverse recovery
  • waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • High quality know-how and capacity
  • in SiC diode manufacture
INFINEON Originalbestand

Spezifikationen

Source Content uid IDW20G65C5 Pbfree Code Yes
Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.10.00.80 Additional Feature HIGH RELIABILITY
Application EFFICIENCY Case Connection CATHODE
Configuration SINGLE Diode Element Material SILICON CARBIDE
Diode Type RECTIFIER DIODE Forward Voltage-Max (VF) 1.7 V
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
Non-rep Pk Forward Current-Max 1432 A Number of Elements 1
Number of Phases 1 Number of Terminals 3
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Output Current-Max 40 A Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 183 W Rep Pk Reverse Voltage-Max 650 V
Reverse Current-Max 220 µA Surface Mount NO
Technology SCHOTTKY Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Series CoolSiC™+ Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 700 µA @ 650 V Capacitance @ Vr, F 590pF @ 1V, 1MHz
Mounting Type Through Hole Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDW20G65

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In Stock: 5.866

Minimum Order: 1

Menge. Einzelpreis Ext. Preis
1+ $14,086 $14,09
10+ $12,913 $129,13
30+ $11,925 $357,75
100+ $11,065 $1.106,50

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