Bezahlverfahren
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Transistor IGBT Chip with DPAK Package - N-channel, 600V Voltage Rating, 9A Current Capacity, Power Dissipation 38mW
TO-252-3Hersteller:
Herstellerteil #:
IRG4RC10KD
Datenblatt:
Launch_date:
Jan 2, 2001
Last_inspection_date:
16 OCT 2022
Supplier_cage_code:
C6489
Schedule_b:
8541290080
EDA/CAD Modelle:
Senden Sie alle Stücklisten an
[email protected],
oder füllen Sie das untenstehende Formular aus, um ein Angebot für IRG4RC10KD zu erhalten. Garantierte Antwort innerhalb
12hr.
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
In a world where efficiency and reliability are paramount, the IRG4RC10KD stands out as a high-power insulated gate bipolar transistor (IGBT) that delivers on all fronts. Its impressive specifications, including a maximum collector current rating of 15A and a collector-emitter voltage rating of 600V, make it a versatile solution for applications that require high efficiency and fast switching speeds. With its low on-state resistance and high current capability, this IGBT excels in inverters, motor drives, and induction heating systems, providing a seamless and efficient power conversion experience. Its compact design and high thermal performance ensure easy integration and reliable operation, making the IRG4RC10KD a top choice for demanding high-power applications
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
place | launch_date | Jan 2, 2001 | |
last_inspection_date | 16 OCT 2022 | supplier_cage_code | C6489 |
htsusa | schedule_b | 8541290080 | |
ppap | False | aec | |
Series | - | IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 9 A |
Current - Collector Pulsed (Icm) | 18 A | Vce(on) (Max) @ Vge, Ic | 2.62V @ 15V, 5A |
Power - Max | 38 W | Switching Energy | 250µJ (on), 140µJ (off) |
Input Type | Standard | Gate Charge | 19 nC |
Td (on/off) @ 25°C | 49ns/97ns | Test Condition | 480V, 5A, 100Ohm, 15V |
Reverse Recovery Time (trr) | 28 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
After-Sales- und Abwicklungsbezogen
Bezahlverfahren
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
BSS88
Infineon Technologies Corporation
1000+ $0,970
IRG4PC50UD
Infineon Technologies Corporation
Trans IGBT Chip N-CH 600V 55A 200W 3-Pin(3+Tab) TO-247AC Tube
IRG4PC40K
Infineon Technologies Corporation
Infineon's IRG4PC40K IGBT, designed for a maximum current of 42 amps and a voltage of 600 volts, enclosed in a TO-247AC package
IRGS14C40L
Infineon Technologies Corporation
IGBT 430 V 20 A 125 W Surface Mount D2PAK
IRGB4062D
Infineon Technologies Corporation
Trans IGBT Chip N-CH 600V 48A 250mW 3-Pin(3+Tab) TO-220AB Tube
Impressed with the prompt delivery by Avaq! Ordered the THGBMJG7C2LBAU8 components and received them ahead of schedule. Excellent service! - Michael W.