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IRGP4050 +BOM

Advanced IGBT technology for high-efficiency power conversion

IRGP4050 Allgemeine Beschreibung

The IRGP4050 from International Rectifier is a cutting-edge insulated-gate bipolar transistor (IGBT) designed to meet the rigorous demands of power electronic applications. With its high-voltage, fast-switching capabilities, and a 3-phase design, it offers unparalleled efficiency and performance. Rated for a maximum voltage of 1200V and a current of 54A, the IRGP4050 is ideal for high-power applications like motor drives, renewable energy systems, and industrial automation. Its low on-state voltage drop and fast switching speeds ensure efficient operation and minimal power losses, making it the go-to choice for power electronics engineers

Infineon Technologies Corporation Inventar

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■ Key parameters optimized for PDP sustain & Energy recovery applications
■ 104A continuous collector current rating reduces component count
■ High pulse current rating makes it ideal for capacitive load circuits
■ Low temperature co-efficient of VCE (ON) ensures reduced power dissipation at operating junction temperatures
■ Reverse voltage avalanche rating improves the robustness in sustain driver application
■ Short fall & rise times for fast switching

Infineon Technologies Corporation Originalbestand

Spezifikationen

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series -
IGBT Type - Voltage - Collector Emitter Breakdown (Max) 250 V
Current - Collector (Ic) (Max) 104 A Current - Collector Pulsed (Icm) 208 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A Power - Max 330 W
Switching Energy 45µJ (on), 125µJ (off) Input Type Standard
Gate Charge 230 nC Td (on/off) @ 25°C 37ns/120ns
Test Condition 180V, 30A, 5Ohm, 15V Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

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