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Siehe Technische Spezifikationen

IXBF12N300 +BOM

IGBT Transistors

Hersteller:

IXYS CORP
Herstellerteil #:

IXBF12N300
Datenblatt:

IXBF12N300 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Transferred
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXBF12N300

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXBF12N300 Allgemeine Beschreibung

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Hauptmerkmale

"Free" intrinsic body diode
High power density
High frequency operation
Low conduction losses
MOS gate turn on for drive simplicity
4000V electrical isolation
Advantages:
Low gate drive requirements
Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
Easy to mount

Anwendung

Switched-mode and resonant-mode power supplies
Uninterruptible Power Supplies (UPS)
Laser and X-ray generators
Capacitor discharge circuits
High voltage pulser circuits
High voltage test equipment
AC switches

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Transferred
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	LOW CONDUCTION LOSS
Case Connection	ISOLATED	Collector Current-Max (IC)	22 A
Collector-Emitter Voltage-Max	3000 V	Configuration	SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max	5 V	Gate-Emitter Voltage-Max	20 V
JESD-30 Code	R-PSIP-T3	JESD-609 Code	e1
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	100 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN SILVER COPPER
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	POWER CONTROL	Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	705 ns	Turn-on Time-Nom (ton)	460 ns

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

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[email protected]

Versand & Verpackung

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..