Bezahlverfahren
K4B4G0846E-BYMA +BOM
78-Pin FBGA DRAM Chip for Low Voltage DDR3L SDRAM
FBGA-
Hersteller:
Samsung Electronics
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Herstellerteil #:
K4B4G0846E-BYMA
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Datenblatt:
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ECCN (US):
EAR99
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HTS:
8542.32.00.36
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Automotive:
No
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PPAP:
No
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EDA/CAD Modelle:
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Verfügbarkeit: 5767 Stck
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K4B4G0846E-BYMA Allgemeine Beschreibung
K4B4G0846E-BYMA is a specific type of electronic component known as a memory chip. More specifically, it is a 4Gb DDR4 SDRAM chip manufactured by Samsung Electronics.
Hauptmerkmale
- It has a capacity of 4 gigabits (equivalent to 512 megabytes) and utilizes DDR4 technology.
- The maximum data rate supported by this chip is 2400 Mbps.
- It operates at a standard voltage of 2V.
- The package type for this specific chip is FBGA (Fine-Pitch Ball Grid Array).
Anwendung
- The K4B4G0846E-BYMA memory chip is commonly used in computer systems, servers, laptops, and other electronic devices.
- It plays a crucial role in storing and accessing data, helping to improve the overall performance of these devices.
Spezifikationen
ECCN (US) | EAR99 | Part Status | Active |
HTS | 8542.32.00.36 | Automotive | No |
PPAP | No | DRAM Type | DDR3L SDRAM |
Chip Density (bit) | 4G | Organization | 512Mx8 |
Number of Internal Banks | 8 | Number of Words per Bank | 64M |
Number of Bits/Word (bit) | 8 | Data Bus Width (bit) | 8 |
Maximum Clock Rate (MHz) | 1866 | Maximum Access Time (ns) | 0.195 |
Address Bus Width (bit) | 19 | Minimum Operating Supply Voltage (V) | 1.283|1.425 |
Maximum Operating Supply Voltage (V) | 1.45|1.575 | Operating Current (mA) | 64 |
Minimum Operating Temperature (°C) | 0 | Maximum Operating Temperature (°C) | 95 |
Supplier Temperature Grade | Commercial | Number of I/O Lines (bit) | 8 |
Mounting | Surface Mount | PCB changed | 78 |
Pin Count | 78 | Lead Shape | Ball |
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In Stock: 5.767
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $6,331 | $6,33 |
10+ | $5,558 | $55,58 |
30+ | $5,089 | $152,67 |
100+ | $4,693 | $469,30 |
Die unten angegebenen Preise dienen nur als Referenz.