Bezahlverfahren
K4B4G1646B-HCMA +BOM
Streamline your digital workflow by integrating this advanced xit DDRSDRAM into your setup
FBGA-
Hersteller:
Samsung Electronics
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Herstellerteil #:
K4B4G1646B-HCMA
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Datenblatt:
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ECCN (US):
EAR99
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Automotive:
No
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PPAP:
No
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DRAM Type:
DDR3 SDRAM
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for K4B4G1646B-HCMA, guaranteed quotes back within 12hr.
Verfügbarkeit: 7218 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
Hauptmerkmale
JEDEC standard 1.5V(1.425V~1.575V)
VDDQ = 1.5V(1.425V~1.575V)
400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,
933MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin
8 Banks
Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13,14
Programmable Additive Latency: 0, CL-2 or CL-1 clock
Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
(DDR3-1066), 7 (DDR3-1333) , 8 (DDR3-1600), 9 (DDR3-1866) and
10 (DDR3-2133)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting
address 000 only), 4 with tCCD = 4 which does not allow seamless
read or write [either On the fly using A12 or MRS]
Bi-directional Differential Data-Strobe
Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at
85C < TCASE < 95 C
Support Industrial Temp ( -4085C )
Asynchronous Reset
Package : 96 balls FBGA - x16
All of Lead-Free products are compliant for RoHS
All of products are Halogen-free
Anwendung
The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications.
Spezifikationen
ECCN (US) | EAR99 | Part Status | Obsolete |
Automotive | No | PPAP | No |
DRAM Type | DDR3 SDRAM | Chip Density (bit) | 4G |
Organization | 256Mx16 | Number of Internal Banks | 8 |
Number of Words per Bank | 32M | Number of Bits/Word (bit) | 16 |
Data Bus Width (bit) | 16 | Maximum Clock Rate (MHz) | 1866 |
Maximum Access Time (ns) | 0.195 | Address Bus Width (bit) | 19 |
Interface Type | SSTL_1.5 | Minimum Operating Supply Voltage (V) | 1.425 |
Maximum Operating Supply Voltage (V) | 1.575 | Minimum Operating Temperature (°C) | 0 |
Maximum Operating Temperature (°C) | 95 | Supplier Temperature Grade | Commercial |
Number of I/O Lines (bit) | 16 | Mounting | Surface Mount |
PCB changed | 96 | Pin Count | 96 |
Lead Shape | Ball |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 7.218
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.